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TSF12N60MS の電気的特性と機能

TSF12N60MSのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSF12N60MS
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSF12N60MS Datasheet, TSF12N60MS PDF,ピン配置, 機能
TSP12N60MS / TSF12N60MS
600V N-Channel MOSFET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for outstanding
low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction
loss, provide superior switching performance, and withstand
extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in
switching mode operation for higher efficiency.
September, 2013
SJ-FET
Features
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.4Ω
• Ultra Low Gate Charge (typ. Qg = 30nC)
• 100% avalanche tested
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
-Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
-Derate above 25℃
(Note 3)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA Thermal Resistance, Junction-to-Ambient
©2012 True Semiconductor Corporation
TSP12N60MS / TSF12N60MS Rev.1.0
TSP12N60MS TSF12N60MS
600
12 12*
8.5 8.5*
40 40*
±30
120
2
60
205
1.67
4.5
35
0.3
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
TSP12N60MS
0.6
0.5
62
TSF12N60MS
6
--
62
Unit
℃/W
℃/W
℃/W

1 Page





TSF12N60MS pdf, ピン配列
Typical Performance Characteristics
Figure 1: On-RegioVnDCSh(aVr)acteristics@25°C
Figure 1: On-RegioVnDCSh(Var)acteristics@125°C
VGS(V)
Figure 3: Transfer Characteristics
ID (A)
Figure 4: On-Resistance vs. Drain Current and Gate Voltage
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
©2012 True Semiconductor Corporation
TSP12N60MS / TSF12N60MS Rev.1.0
TJ (°C)
Figure 6: Break Down vs. Junction Temperature


3Pages


TSF12N60MS 電子部品, 半導体
Typical Performance Characteristics
Pulse Width (s)
Figure 16: Single Pulse Power Rating Junction-to-Ambient
Pulse Width (s)
Figure 17: Normalized Maximum Transient Thermal Impedance
©2012 True Semiconductor Corporation
TSP12N60MS / TSF12N60MS Rev.1.0

6 Page



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共有リンク

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部品番号部品説明メーカ
TSF12N60M

600V N-Channel MOSFET

Truesemi
Truesemi
TSF12N60MS

N-Channel MOSFET

Truesemi
Truesemi


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