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PDF TSB10N60S Data sheet ( Hoja de datos )
| Número de pieza | TSB10N60S | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Truesemi | |
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September, 2013
SJ-FET
TSP10N60S/TSF10N60S /TSB10N60S
600V N-Channel MOSFET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for
outstanding low on-resistance and lower gate charge
performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy. SJ-
FET is suitable for various AC/DC power conversion
inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.42Ω
• Ultra Low Gate Charge (typ. Qg = 35nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
TSB10N60S
9.5*
8*
IDM Drain Current - Pulsed
(Note 1)
40*
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR
dv/dt
PD
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
83
1.5
TJ, TSTG Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TSP10N60S
600
9.5
8
40
±30
120
2
60
4.5
83
1.67
-55 to +150
300
TSF10N60S
9.5*
8*
40*
35
0.3
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
TSB10N60S TSP10N60S
1.5 0.6
0.5 --
75 62
TSF10N60S
3.6
--
62
Unit
℃/W
℃/W
℃/W
©2013 True Semiconductor Corporation
TSP10N60S / TSF10N60S/TSB10N60S Rev.1.0
1 page  
Typical Performance Characteristics
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance
TCASE (°C)
Figure 13: Avalanche energy
TCASE (°C)
Figure 14: Current De-rating
©2013 True Semiconductor Corporation
TSP10N60S / TSF10N60S/TSB10N60S Rev.1.0
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet TSB10N60S.PDF ] | |
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