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TSF20N65S の電気的特性と機能

TSF20N65SのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSF20N65S
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSF20N65S Datasheet, TSF20N65S PDF,ピン配置, 機能
TSP20N65S,TSF20N65S, TSB20N65S
650V N-Channel MOSFET
September, 2013
SJ-FET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for
outstanding low on-resistance and lower gate charge
performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy. SJ-
FET is suitable for various AC/DC power conversion
inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current -Continuous (TC = 25)
-Continuous (TC = 100)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25)
-Derate above 25
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
TSB20N65S
20*
10*
60*
151
1.5
TSP20N65S
650
20
10
60
±30
600
20
20.5
4.5
151
1.67
-55 to +150
300
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
TSB20N65S
1.5
0.5
75
TSP20N65S
0.6
--
62
TSF20N65S
20*
10*
60*
35
0.3
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/
TSF20N65S
3.6
--
62
Unit
/W
/W
/W
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0

1 Page





TSF20N65S pdf, ピン配列
Typical Performance Characteristics
Drain-source voltage VDS (V)
Figure 1: On-Region Characteristics@25°C
Drain-source voltage VDS (V)
Figure 2: On-Region Characteristics@125°C
VGS (V)
Figure 3: Transfer Charateristics
ID (A)
Figure 4: On-Resistance vs. Drain Current (ID)
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
TJ (°C)
Figure 6: Break Down vs. Junction Temperature
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0


3Pages


TSF20N65S 電子部品, 半導体
Typical Performance Characteristics
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-Ambient
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0

6 Page



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部品番号部品説明メーカ
TSF20N65S

N-Channel MOSFET

Truesemi
Truesemi


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