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TSF20N65SのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | TSF20N65S |
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部品説明 | N-Channel MOSFET | ||
メーカ | Truesemi | ||
ロゴ | |||
このページの下部にプレビューとTSF20N65Sダウンロード(pdfファイル)リンクがあります。 Total 10 pages
TSP20N65S,TSF20N65S, TSB20N65S
650V N-Channel MOSFET
September, 2013
SJ-FET
Description
SJ-FET is new generation of high voltage MOSFET family that
is utilizing an advanced charge balance mechanism for
outstanding low on-resistance and lower gate charge
performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy. SJ-
FET is suitable for various AC/DC power conversion
inswitching mode operation for higher efficiency.
Features
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.16Ω
• Ultra Low Gate Charge (typ. Qg = 63nC)
• 100% avalanche tested
• Rohs Compliant
D2-PAK (TO-263)
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current -Continuous (TC = 25℃)
-Continuous (TC = 100℃)
Drain Current - Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TC = 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
TSB20N65S
20*
10*
60*
151
1.5
TSP20N65S
650
20
10
60
±30
600
20
20.5
4.5
151
1.67
-55 to +150
300
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case
RθCS
Thermal Resistance, Case-to-Sink Typ.
RθJA
Thermal Resistance, Junction-to-Ambient
TSB20N65S
1.5
0.5
75
TSP20N65S
0.6
--
62
TSF20N65S
20*
10*
60*
35
0.3
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
℃
TSF20N65S
3.6
--
62
Unit
℃/W
℃/W
℃/W
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0
1 Page Typical Performance Characteristics
Drain-source voltage VDS (V)
Figure 1: On-Region Characteristics@25°C
Drain-source voltage VDS (V)
Figure 2: On-Region Characteristics@125°C
VGS (V)
Figure 3: Transfer Charateristics
ID (A)
Figure 4: On-Resistance vs. Drain Current (ID)
Temperature (°C)
Figure 5: On-Resistance vs. Junction Temperature
TJ (°C)
Figure 6: Break Down vs. Junction Temperature
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0
3Pages Typical Performance Characteristics
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-Ambient
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance
©2013 True Semiconductor Corporation
TSP20N65S/TSF20N65S/TSB20N65S Rev.1.0
6 Page | |||
ページ | 合計 : 10 ページ | ||
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部品番号 | 部品説明 | メーカ |
TSF20N65S | N-Channel MOSFET | Truesemi |