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TSF3N80N の電気的特性と機能

TSF3N80NのメーカーはTruesemiです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 TSF3N80N
部品説明 N-Channel MOSFET
メーカ Truesemi
ロゴ Truesemi ロゴ 




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TSF3N80N Datasheet, TSF3N80N PDF,ピン配置, 機能
TSP3N80N / TSF3N80N
800V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Features
• 3.0A, 800V, RDS(on) = 5.00@VGS = 10 V
• Low gate charge ( typical 15nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
{D
GDS
TO-220
GD S
TO-220F
◀▲
{G
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
TSP3N80N
TSF3N80N
800
3.0 3.0*
1.8 1.8 *
12 12*
± 30
336
10.7
4.0
107 39
0.85 0.31
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TSP3N80N
1.17
0.5
62.5
TSF3N80N
3.2
--
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W

1 Page





TSF3N80N pdf, ピン配列
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 5. Capacitance Characteristics
Figure 4. Body Diode Forward Voltage
Variation with Source Current
12
VDS = 120V
10
VDS = 400V
8 VDS = 640V
6
4
2
Note : ID = 3.0 A
0
0 3 6 9 12 15 18
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics


3Pages


TSF3N80N 電子部品, 半導体
Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
EAS=--21-- LIAS2
BVDSS
--------------------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
DUT
VDD
VDS(t)
tp Time

6 Page



ページ 合計 : 7 ページ
 
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ダウンロード
[ TSF3N80N データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
TSF3N80M

N-Channel MOSFET

Truesemi
Truesemi
TSF3N80N

N-Channel MOSFET

Truesemi
Truesemi


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