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WFF1N60 の電気的特性と機能

WFF1N60のメーカーはWisdom technologiesです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 WFF1N60
部品説明 N-Channel MOSFET
メーカ Wisdom technologies
ロゴ Wisdom technologies ロゴ 




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WFF1N60 Datasheet, WFF1N60 PDF,ピン配置, 機能
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFF1 N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 5nC (Typ.)
BVDSS=600V,ID=1A
RDS(on) : 11.5(Max) @VG=10V
100% Avalanche Tested
GD S
D
!
G!
◀▲
!
S
 
TO220F   
GGate,DDrain,SSourse 
 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF1 N60
600
1*
0.6*
±30
50
1
21
-55 ~ +150
300
Thermal Characteristics 
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
5.95
62.5
Unit
V
A
A
V
mJ
A
W
Units
/W
/W
www.wisdom-technologies.com 
 
    Rev.A0,August , 2010 | 
1 
 

1 Page





WFF1N60 pdf, ピン配列
Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET 
VGS
Top : 15.0 V
10.0 V
8.0 V
100 7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
10-1
10-2
10-1
 Notes :
1. 250s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
30
25
VGS = 10V
20 VGS = 20V
15
10
5
 Note : TJ = 25
0
0.0 0.5 1.0 1.5 2.0 2.5
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
200
150
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
100
 Notes :
1. VGS = 0 V
50 Crss 2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10-1
2
150
25
-55
 Notes :
1. VDS = 50V
2. 250s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150 25
Notes :
1. V =0V
GS
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
 Note : ID = 1.2 A
0
012345
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.wisdom-technologies.co m
 
    Rev.A0,August , 2010 | 
3 
 


3Pages


WFF1N60 電子部品, 半導体
HIGH VOLTAGE N-Channel MOSFET 
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
www.wisdom-technologies.co  m  
    Rev.A0,August , 2010 | 
6 
 

6 Page



ページ 合計 : 6 ページ
 
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[ WFF1N60 データシート.PDF ]


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共有リンク

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部品番号部品説明メーカ
WFF1N60

N-Channel MOSFET

Wisdom technologies
Wisdom technologies


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