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WFF1N60のメーカーはWisdom technologiesです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | WFF1N60 |
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部品説明 | N-Channel MOSFET | ||
メーカ | Wisdom technologies | ||
ロゴ | |||
このページの下部にプレビューとWFF1N60ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
HIGH VOLTAGE N-Channel MOSFET
WFF1 N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 5nC (Typ.)
□ BVDSS=600V,ID=1A
□ RDS(on) : 11.5Ω (Max) @VG=10V
□ 100% Avalanche Tested
GD S
D
!
G!
●
◀▲
●
●
!
S
TO‐220F
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFF1 N60
600
1*
0.6*
±30
50
1
21
-55 ~ +150
300
Thermal Characteristics
Symbol
Parameter
RθJC Thermal Resistance,Junction to Case
RθJA Thermal Resistance,Junction to Ambient
* Drain current limited by maximum junction temperature.
Typ.
--
--
Max
5.95
62.5
Unit
V
A
A
V
mJ
A
W
℃
℃
Units
℃/W
℃/W
www.wisdom-technologies.com
Rev.A0,August , 2010 |
1
1 Page Typical Characteristics
HIGH VOLTAGE N-Channel MOSFET
VGS
Top : 15.0 V
10.0 V
8.0 V
100 7.0 V
6.5 V
6.0 V
Bottom: 5.5 V
10-1
10-2
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
30
25
VGS = 10V
20 VGS = 20V
15
10
5
Note : TJ = 25
0
0.0 0.5 1.0 1.5 2.0 2.5
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
200
150
C
iss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
100
Notes :
1. VGS = 0 V
50 Crss 2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10-1
2
150
25
-55
Notes :
1. VDS = 50V
2. 250s Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
100
10-1
0.2
150 25
Notes :
1. V =0V
GS
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
Note : ID = 1.2 A
0
012345
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
www.wisdom-technologies.co m
Rev.A0,August , 2010 |
3
3Pages HIGH VOLTAGE N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
www.wisdom-technologies.co m
Rev.A0,August , 2010 |
6
6 Page | |||
ページ | 合計 : 6 ページ | ||
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部品番号 | 部品説明 | メーカ |
WFF1N60 | N-Channel MOSFET | Wisdom technologies |