|
|
Datasheet BF92301P Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BF92301P | P-Channel MOSFET BYD Microelectronics Co., Ltd.
General Description
The BF92301P uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
Features
z VDS (V) = -20V z ID = -2.8A z Low on-state resistance
RDS (on) = 80m� | BYD | mosfet |
BF9 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BF900 | Sicherungshalter Type BF900 Sicherungshalter
IEC 60127-6 250V 6,3A
Bezeichnung / Kennzeichnung
Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpackung Approbationen
Sicherungshalter f� Inter Control data | | |
2 | BF901 | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
3 | BF901R | Silicon n-channel dual gate MOS-FETs DISCRETE SEMICONDUCTORS
DATA SHEET
BF901; BF901R Silicon n-channel dual gate MOS-FETs
Product specification File under Discrete Semiconductors, SC07 November 1992
Philips Semiconductors
Product specification
Silicon n-channel dual gate MOS-FETs
FEATURES • Intended for low voltage operation NXP Semiconductors gate | | |
4 | BF9024SPD-M | P-Channel MOSFET and Schottky Diode BF9024SPD-M
BYD Microelectronics Co., Ltd
P-Channel MOSFET and Schottky Diode
General Description
The BF9024SPD-M uses advanced trench technology to Provide excellent RDS (ON) and low gate charge. This device is suitable for used as a load switch or in PWM applications.
8
7
6
5
Features MOSFE BYD mosfet | | |
5 | BF9028DND-A | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-A
20V N-Channel MOSFET
General Description
The BF9028DND-A is a Dual N-Channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
D D DD 87 6 5
Features BYD mosfet | | |
6 | BF9028DND-GE | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DND-GE
20V N-Channel MOSFET
General Description
The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics.
Features
z VDS=24 V z BYD mosfet | | |
7 | BF9028DNT | N-Channel MOSFET BYD Microelectronics Co., Ltd.
BF9028DNT
20V N-Channel MOSFET
85
General Description
The BF9028DNT is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. .
TSSOP-8
1 : drain1 2, BYD mosfet | |
Esta página es del resultado de búsqueda del BF92301P. Si pulsa el resultado de búsqueda de BF92301P se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |