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PDF BF92302N Data sheet ( Hoja de datos )
| Número de pieza | BF92302N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
General Description
The BF92302N uses advanced trench technology to
provide excellent RDS(ON) and low gate charge.
This device is suitable for used as a load switch or in
PWM applications.
Features
z VDS (V) = 20V
z ID = 3 A
z Low on-state resistance
RDS (on) = 50mΩ TYP.(VGS = 4.5V)
RDS (on) = 60mΩ TYP.(VGS = 2.5V)
BF92302N
20V N-Channel MOSFET
Absolute Maximum Ratings (Ta = 25℃)
Parameter
N-MOSFET
Symbol Value
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)a
Maximun Power Dissipationa
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PD
Tch
Tstg
20
±8
3
12
1.3
150
-55~+150
V
V
A
A
W
℃
℃
Note: Mounted on FR4 Board of 1”x1”.
Caution: These values must not be exceeded under any conditions.
Ordering Information
z Part Number : BF92302N
z Package :
SOT-23
Datasheet
TS-MOS-PD-0027 Rev.A/0
Page1of7
1 page  
BYD Microelectronics Co., Ltd.
Figure 12 Normalized Maximum Transient Thermal Impedance
1
BF92302N
0.1
0.01
0.00001
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.001
0.01 0.1
1
t1, Square Wave Pulse Duration [sec]
10
100
1000
Datasheet
TS-MOS-PD-0027 Rev.A/0
Page 5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BF92302N.PDF ] | |
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