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BF95N50L の電気的特性と機能

BF95N50LのメーカーはBYDです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BF95N50L
部品説明 N-Channel MOSFET
メーカ BYD
ロゴ BYD ロゴ 




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BF95N50L Datasheet, BF95N50L PDF,ピン配置, 機能
BYD Microelectronics Co., Ltd.
BF95N50T/BF95N50L
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using VDMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Features
z VDS =500 V
z ID=5A
z RDS(ON)1.60TYP(VGS=10V,ID=2.5A)
z Low CRSS (typical 7.8 pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
IAR Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
(Note1)
(Note1)
(Note2)
(Note1)
(Note3)
BF95N50T BF95N50L
500
5
20
±30
5
220
6.9
5.0
69
-55 to +150
300
Unit
V
A
A
V
A
mJ
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 1 of 8

1 Page





BF95N50L pdf, ピン配列
BYD Microelectronics Co., Ltd.
BF95N50T/ BF95N50L
Typical characteristics (25unless noted)
Figure 1 Output Characteristics
Figure 2 Transfer Characteristics
ID1(0A)
8
6
VGS
TOP: 10V
8V
7V
6V
5V
Bottem : 4V
4
ID1(A0)
8
6
4
VDS=25V
22
0
0
5 10 15 20 VD2S5(V)
0
0 2 4 6 8 VGS1(V0)
Figure 3 Normalized Threshold Voltage vs.
Temperature
1V.4th
1.2
1.0
0.8
VDS=VGS
ID=250uA
0.6
0.4
-75 -25 25
75 125 T1j(75)
Figure 5 Normalized on Resistance
vs Temperature
RD2S.(4on)
2.0
1.6
VGS=10V
ID=2.5A
1.2
0.8
0.4
-75 -25 25 75 125 Tj(17)5
Figure 4 Normalized BVDSS vs.Temperature
BV1D.2S5S
1.15
1.05
0.95
0.85
VGS=0V
ID=250uA
0.75
-75 -25 25 75 125 Tj1(75)
Figure 6 Source-Drain Diode Forward
Characteristics
VSD1(.V0 )
0.9
0.8
0.7
0.6
0.5
0 2 4 6 8 ISD1(0A)
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 3 of 8


3Pages


BF95N50L 電子部品, 半導体
BYD Microelectronics Co., Ltd.
TO-220
D
D1 Φ
BF95N50T/ BF95N50L
A
A1
b1 b2
eb
D2
C A2
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 6 of 8

6 Page



ページ 合計 : 8 ページ
 
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共有リンク

Link :


部品番号部品説明メーカ
BF95N50L

N-Channel MOSFET

BYD
BYD
BF95N50T

N-Channel MOSFET

BYD
BYD


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