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PDF BF95N50T Data sheet ( Hoja de datos )

Número de pieza BF95N50T
Descripción N-Channel MOSFET
Fabricantes BYD 
Logotipo BYD Logotipo



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No Preview Available ! BF95N50T Hoja de datos, Descripción, Manual

BYD Microelectronics Co., Ltd.
BF95N50T/BF95N50L
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using VDMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
Features
z VDS =500 V
z ID=5A
z RDS(ON)1.60TYP(VGS=10V,ID=2.5A)
z Low CRSS (typical 7.8 pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
VGS Gate-Source Voltage
IAR Avalanche Current
EAS Single Pulse Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
(Note1)
(Note1)
(Note2)
(Note1)
(Note3)
BF95N50T BF95N50L
500
5
20
±30
5
220
6.9
5.0
69
-55 to +150
300
Unit
V
A
A
V
A
mJ
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0063Rev.A/3
Page 1 of 8

1 page




BF95N50T pdf
BYD Microelectronics Co., Ltd.
Package Drawing
TO-252
E
b2
A
c
BF95N50T/ BF95N50L
E1
A1
b1
e
b
Q
L2
Symbol
A
A1
b
b1
b2
c
D
D1
E
E1
e
H
L
L1
L2
L3
L4
L5
Q
Dimensions In Millimeters
Min
Nom
Max
2.22 2.32 2.42
- - 0.125
0.55 0.61 0.67
0.76 0.86 0.96
5.20 5.30 5.40
0.45 0.50 0.55
5.95 6.10 6.25
4.20 4.35 4.50
6.40 6.55 6.70
4.75 4.80 4.85
2.28REF
9.44 9.79 10.14
1.37 1.52 1.67
2.75REF
0.50REF
0.90 0.95 1.00
0.65 0.80 0.95
1.14 1.33 1.52
0° - 6°
Min
0.087
-
0.022
0.030
0.205
0.018
0.234
0.165
0.252
0.187
0.372
0.054
0.035
0.026
0.045
Dimensions In Inches
Nom
0.091
-
0.024
0.034
0.209
0.020
0.240
0.171
0.258
0.189
0.09REF
0.385
0.060
0.108REF
0.020REF
0.037
0.031
0.052
-
Max
0.095
0.005
0.026
0.038
0.213
0.022
0.246
0.177
0.264
0.191
0.399
0.066
0.039
0.037
0.060
Datasheet
TS-MOS-PD-0063Rev.A/3
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