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PDF BF92N60L Data sheet ( Hoja de datos )
| Número de pieza | BF92N60L | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | BYD | |
| Logotipo |  |
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BYD Microelectronics Co., Ltd.
BF92N60/BF92N60L/BF92N60R/BF92N60T
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =2A
z RDS(ON) =3.6Ω TYP(VGS=10V,ID=1A)
z Low CRSS (typical 4.5pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
Tstg
TL
Drain-Source Voltage
Drain Current(continuous)at Tc=25°C
Drain Current (pulsed)
(Note1)
Gate-Source Voltage
SinglePulseAvalanche Energy
(Note2)
Avalanche Current
(Note1)
RepetitiveAvalancheEnergy
(Note1)
PeakDiodeRecoverydv/dt
(Note3)
Power Dissipation (TC = 25°C)
Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose
BF92N60R/
BF92N60T
46
BF92N60L
600
2
8
±30
130
2.0
5.4
5
54
-55 to +150
300
BF92N60
24
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
Datasheet
TS-MOS-PD-0006 Rev.A/3
Page 1 of 13
1 page  
BYD Microelectronics Co., Ltd.
BF92N60/BF92N60RL/BF92N60R /BF92N60T
Figure 11-1 Maximum Transient Thermal Impedance For BF92N60R/BF92N60T
10
D=0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
Figure 11-2 Maximum Transient Thermal Impedance For BF92N60L
10
10
D=0.50
1
0.20
0.10
0.05
0.1 0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
Figure 11-3 Maximum Transient Thermal Impedance For BF92N60
10
D=0.50
1 0.20
0.10
0.05
0.02
0.1 0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t2
2. Peak TJ = PDM x ZthJC + Tc
0.0001
0.001
0.01
0.1
t1, Square Wave Pulse Duration [sec]
1
Datasheet
TS-MOS-PD-0006 Rev.A/3
10
10
Page 5 of 13
5 Page 
BYD Microelectronics Co., Ltd.
TO-220F(B)
E
E1
BF92N60/BF92N60RL/BF92N60R /BF92N60T
A2
A1
D3
b2
2Xe
Top View
E2
3Xb1
3Xb
Side View
C
A4
Side View
Datasheet
TS-MOS-PD-0006 Rev.A/3
Page 11 of 13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BF92N60L.PDF ] | |
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