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BF98N60 の電気的特性と機能

BF98N60のメーカーはBYDです、この部品の機能は「N-Channel MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 BF98N60
部品説明 N-Channel MOSFET
メーカ BYD
ロゴ BYD ロゴ 




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BF98N60 Datasheet, BF98N60 PDF,ピン配置, 機能
BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Features
z VDS =600 V
z ID =8A
z RDS(ON) =1.0 TYP(VGS=10V ID=4.0A)
z Low CRSS (typical 11pF)
z Fast switching
Absolute Maximum Ratings
Symbol Parameter
VDS Drain-Source Voltage
ID Drain Current(continuous)at Tc=25°C
IDM Drain Current (pulsed)
(Note1)
VGS Gate-Source Voltage
EAS SinglePulseAvalanche Energy
(Note2)
IAR Avalanche Current
(Note1)
EAR RepetitiveAvalancheEnergy
(Note1)
dv/dt
PeakDiodeRecoverydv/dt
(Note3)
PD Power Dissipation (TC = 25°C)
Tstg Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose
BF98N60L
BF98N60
600
8
32
±30
240
8
13.9 4.5
5.0
139 45
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
°C
°C
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 1 of 11

1 Page





BF98N60 pdf, ピン配列
BYD Microelectronics Co., Ltd.
BF98N60/BF98N60L
Typical characteristics (25unless noted)
Figure 1 Output Characteristics
ID1(A5)
12
9
6
V GS
Top : 10V
8V
7V
6V
5V
Bottom : 4V
Figure 2 Transfer Characteristics
ID(1A5)
12
9
6 VDS=25V
33
0
0 5 10 15 20 VDS(2V5)
Figure 3 Normalized Threshold Voltage
vs. Temperature
1V.t2h
1.1
1.0
V DS =V GS
ID=250uA
0.9
0
0 2 4 6 8 VGS(1V0)
Figure 4 Normalized BVDSS vs.Temperature
BV1.D3SS
1.2
1.1 VGS=0 V
ID=250uA
1.0
0.8 0.9
0.7
-75 -25 25 75 125 Tj(175)
Figure 5 Normalized on Resistance
vs Temperature
R2DS.7(o5n)
2.25
1.75
1.25
0.75
VGS=10V
ID=4A
0.25
-75
-25
25
75 125 Tj1(75)
0.8
-75
-25
25
75 125 Tj1(75)
Figure 6 Source-Drain Diode Forward
Characteristic
VSD (V1)
0.9
0.8
0.7
0.6
0.5
0 2 4 6 8 ISD1(A0)
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 3 of 11


3Pages


BF98N60 電子部品, 半導体
BYD Microelectronics Co., Ltd.
Package Drawing
TO-220
D
D1
Φ
BF98N60/BF98N60L
A
A1
b1 b2
eb
D2
C A2
Datasheet
TS-MOS-PD-0013 Rev.A/4
Page 6 of 11

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
BF98N60

N-Channel MOSFET

BYD
BYD
BF98N60L

N-Channel MOSFET

BYD
BYD


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