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PDF MDU5692S Data sheet ( Hoja de datos )
| Número de pieza | MDU5692S | |
| Descripción | Dual N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDU5692S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5692S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5692S is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
VDS = 30V
ID = 52A
VDS = 30V
ID = 100A @VGS = 10V
RDS(ON)
< 5.4mΩ
< 8.5mΩ
< 2.0mΩ @VGS = 10V
< 2.5mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
12
3
4
S2
5 S2
6 S2
S1/D2 7 8 G2
D1 4 3
D1
D1
2
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TA=25oC
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
FET1
FET2
30
±20 ±12
70 160
52 100
57 129
15.3 27.9
12.4 22.4
208 400
46.3 83.3
2.2 2.5
43 100
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Aug. 2015 Ver. 1.1
Symbol
RθJA
RθJC
FET1
Typ. Max
47.5 57
2.2 2.7
FET2
Typ. Max
41.7 50
1.1 1.5
Unit
oC/W
1 MagnaChip Semiconductor Ltd.
1 page  
FET2 Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 10mA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 10V, ID = 20A
TJ=125oC
VGS = 4.5V, ID = 20A
VDS = 5V, ID = 20A
VDS = 15.0V, ID = 20A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDD=15V,
ID=20A, Rg=3Ω
f=1 MHz
IS = 1.0A, VGS = 0V
IF = 20A, dl/dt = 200A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V..
Min Typ Max Unit
30 -
-
1.1 1.4 2.2
V
- - 500
μA
- - ±0.1
- 1.5 2.0
- 1.9 2.7 mΩ
- 1.9 2.5
- 100 -
S
49
20
-
-
3573
820
64
-
-
-
-
0.5
70
29
10.8
6.6
5140
1200
94
15.7
12.7
77
9.6
1.0
92
39
-
-
6679
1560
122
-
-
-
-
2.0
nC
pF
ns
Ω
-
0.4 1.0
V
- 42 - ns
- 70 - nC
Aug. 2015 Ver. 1.1
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MDU5692S.PDF ] | |
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