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MDU1532SのメーカーはMagnaChipです、この部品の機能は「N-Channel MOSFET」です。 |
部品番号 | MDU1532S |
| |
部品説明 | N-Channel MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDU1532Sダウンロード(pdfファイル)リンクがあります。 Total 6 pages
7.9
MDU1532S
Single N-channel Trench MOSFET 30V
General Description
The MDU1532S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1532S is suitable device for DC/DC
Converter and general purpose applications.
DD DD
DD DD
Features
VDS = 30V
ID = 32A @VGS = 10V
RDS(ON)
< 4.2 mΩ @VGS = 10V
< 5.3 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
SBD Built In
D
S SSG
GS SS
G
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TA=25oC
TA=70oC
TC=25oC
TA=25oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Aug. 2014. Ver. 0.1
1
S
Rating
30
±20
105
32
29.5
23.7
128
69
5.5
20
-55~150
Unit
V
V
A
W
mJ
oC
Rating
22.7
1.8
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 Page 50
VGS = 10V
8.0V
6.0V
40
4.5V
4.0V
30
20
3.0V
10
0
0.0 0.2 0.4 0.6 0.8
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.0
1.8
※ Notes :
1. VGS = 10 V
1.6 2. ID = 20 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100
TJ, Junction Temperature [oC]
125
Fig.3 On-Resistance Variation with
Temperature
150
30
※ Notes :
VDS = 5V
25
20
15
10
5
0
0246
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
10
8
6
VGS = 4.5V
4
VGS = 10V
2
0
0 10 20 30 40 50
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
50
※ Notes :
ID = 20.0A
40
30
20
10
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V = 0V
GS
10
1
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Aug. 2014. Ver. 0.1
3 MagnaChip Semiconductor Ltd.
3Pages DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Aug. 2014. Ver. 0.1
6 MagnaChip Semiconductor Ltd.
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ MDU1532S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MDU1532S | N-Channel MOSFET | MagnaChip |