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PDF MDU06N031 Data sheet ( Hoja de datos )
| Número de pieza | MDU06N031 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDU06N031
Single N-channel Trench MOSFET 60V, 100A, 3.1mΩ
General Description
The MDU06N031 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU06N031 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 60V
ID = 100A @VGS = 10V
RDS(ON)
< 3.1mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=100oC (Silicon Limited)
TA=25oC(3)
TC=25oC
TC=100oC
TA=25oC(3)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Jun. 2015. Rev. 1.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
60
±20
164.7
100.0
104.2
22.2(3)
400.0
138.9
55.6
2.5(3)
288
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50.0
0.9
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
PDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Dimension
A
b
C
D1
D2
E
E1
E2
e
H
K
L
α
MILLIMETERS
Min Max
0.90 1.10
0.33 0.51
0.20 0.34
4.50 5.10
- 4.22
5.90 6.30
5.50 6.10
- 4.30
1.27BSC
0.41 0.71
0.20 -
0.51 0.71
0° 12°
Jun. 2015. Rev. 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDU06N031.PDF ] | |
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