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Datasheet MDV1951B PDF ( 特性, スペック, ピン接続図 )

部品番号 MDV1951B
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
プレビュー
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MDV1951B Datasheet, MDV1951B PDF,ピン配置, 機能
MDV1951B
Single N-channel Trench MOSFET 60V, 12A, 45mΩ
General Description
The MDV1951 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1951 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 60V
ID = 12A @VGS = 10V
RDS(ON)
< 45mΩ @VGS = 10V
< 55mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Aug. 2015. Version3.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
60
±20
14.6
12.0
9.5
6.6 (3)
5.3 (3)
48.0
24.0
15.3
3.4 (3)
2.2 (3)
11.2
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
5.2
Unit
oC/W
MagnaChip Semiconductor Ltd.

1 Page



MDV1951B pdf, ピン配列
15
VGS=10.0V
VGS=5.0V
10
VGS=4.0V
5
VGS=3.0V
0
01234
VDS (Volts)
Fig.1 On-Region Characteristics
5
2.0
1.8
VGS=4.5V
1.6 ID=3.0A
1.4 VGS=10V
ID=4.5A
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
20
15
10
125
25
5
0
01234
VGS (Volts)
Fig.5 Transfer Characteristics
5
Aug. 2015. Version3.0
3
120
110
100
90
80
70
60
50
40
30
20
10
0
VGS=4.5V
VGS=10V
5 10 15 20 25 30
I [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
160
120
80
TA = 125
40
TA = 25
0
2 4 6 8 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
10
1 125،ة
25،ة
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDV1951B 電子部品, 半導体
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Aug. 2015. Version3.0
6 MagnaChip Semiconductor Ltd.

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