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MDV1951B PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MDV1951B
部品説明 N-Channel MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 

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MDV1951B Datasheet, MDV1951B PDF,ピン配置, 機能
MDV1951B
Single N-channel Trench MOSFET 60V, 12A, 45mΩ
General Description
The MDV1951 uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1951 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 60V
ID = 12A @VGS = 10V
RDS(ON)
< 45mΩ @VGS = 10V
< 55mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Aug. 2015. Version3.0
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
60
±20
14.6
12.0
9.5
6.6 (3)
5.3 (3)
48.0
24.0
15.3
3.4 (3)
2.2 (3)
11.2
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
5.2
Unit
oC/W
MagnaChip Semiconductor Ltd.

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