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PDF MDP12N50 Data sheet ( Hoja de datos )
| Número de pieza | MDP12N50 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDP12N50
N-Channel MOSFET 500V, 11.5 A, 0.65Ω
General Description
The MDP12N50 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDP12N50 is suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 500V
ID = 11.5A
RDS(ON) ≤ 0.65Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
G
S
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
11.5
7.0
46
165
1.33
4.5
460
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
0.75
Unit
oC/W
Aug 2009. Version 3.0
1 MagnaChip Semiconductor Ltd.
1 page  
TO220, 3L
Dimensions are in millimeters, unless otherwise specified
Aug 2009. Version 3.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDP12N50.PDF ] | |
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