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PDF MDD9N40 Data sheet ( Hoja de datos )
| Número de pieza | MDD9N40 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDD9N40
N-Channel MOSFET 400V, 6A, 0.85Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 400V
ID = 6A
RDS(ON) ≤ 0.85Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
G
S
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Oct. 2012 Version 1.0
Symbol
RθJA
RθJC
1
Rating
400
±30
6.0*
3.79*
24*
69.4
0.57
6.94
4.5
300
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Rating
110
1.75
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
Oct. 2012 Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDD9N40.PDF ] | |
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