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PDF MDIS4N65B Data sheet ( Hoja de datos )
| Número de pieza | MDIS4N65B | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDIS4N65B (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDIS4N65B
N-Channel MOSFET 650V, 3.65A, 2.2Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
VDS = 650V
ID = 3.65A
RDS(ON) ≤ 2.2Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
PFC
High Current, High Speed Switching
D
TO-251-VS
(IPAK- VS)
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
G
Symbol
VDSS
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
S
Rating
650
±30
3.65
2.3
14.6
68.3
0.54
6.83
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
mJ
V/ns
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Symbol
RθJA
RθJC
MDIS4N65B
110
1.83
Unit
oC/W
Jun. 2012 Version 0.0
1 MagnaChip Semiconductor td.
1 page  
Physical Dimension
TO-251-VS (IPAK-VS)
Dimensions are in millimeters, unless otherwise specified
Jun. 2012 Version 0.0
5 MagnaChip Semiconductor td.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDIS4N65B.PDF ] | |
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