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PDF MDH3331 Data sheet ( Hoja de datos )
| Número de pieza | MDH3331 | |
| Descripción | P-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDH3331
P-Channel Trench MOSFET, -20V, -3.5A, 75mΩ
General Description
The MDH3331 uses advanced MagnaChip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
G
S
SOT-23
D
Features
à VDS = -20V
à ID = -3.5 @ VGS = -10V
à RDS(ON)
<75mΩ @ VGS = -4.5V
<105mΩ @ VGS = -2.5V
Applications
à PWM
à Load Switch
à General Purpose
D
G
S
Absolute Maximum Ratings (TC =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
(Note 1)
Symbol
VDSS
VGSS
ID
IDM
PD
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
-20
±12
-3.5
-15
1.4
-55~+150
Unit
V
V
A
A
W
oC
Rating
90
60
Unit
oC/W
October 2009. Version 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
5
※ Note : ID = -3.5A
4
3
VDS = -10V
2
1
0
02468
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10
102
Operation in This Area
is Limited by R DS(on)
101 1 ms
10 ms
100 ms
1s
100 10 s
DC
10-1
10-2
10-1
Single Pulse
RthJA=90.0℃/W
TA=25℃
100 101
-VDS, Drain-Source Voltage [V]
102
Fig.9 Maximum Safe Operating Area
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TA = PDM * Zθ JA* Rθ JA(t) + TA
RΘ JA=90℃/W
10-3
10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
8.0x10-10
6.0x10-10
4.0x10-10
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2.0x10-10
Coss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
0.0
0
Crss
5
10
15
-VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
20
5
4
3
2
1
※ Notes :
RthJA = 90 [℃/W]
0
25 50 75 100 125 150
TA, Case Temperature [℃]
Fig.10 Maximum Drain Current vs. Case
Temperature
October 2009. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
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| PDF Descargar | [ Datasheet MDH3331.PDF ] | |
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