|
|
|
PDF MDS1524 Data sheet ( 特性 )
| 部品番号 | MDS1524 |
| |
| 部品説明 | N-Channel Trench MOSFET | ||
| メーカ | MagnaChip | ||
| ロゴ |  |
||
このページの下部にプレビューとMDS1524ダウンロード（pdfファイル）リンクがあります。 Total 5 pages
MDS1524
Single N-channel Trench MOSFET 30V, 19.3A, 8.1mΩ
General Description
The MDS1524 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1524 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 19.3A @VGS = 10V
RDS(ON)
< 8.1mΩ @VGS = 10V
< 11.6mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
June. 2011. Version1.2
1
D
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
19.3
15.4
13.2(3)
10.6(3)
40
5.3
3.4
2.5(3)
1.6(3)
60
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
23.2
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 Page  
20
4.0V 3.5V
15 4.5V
5.0V
8.0V
10 VGS = 10V
3.0V
5
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
1.8
VGS=10V
1.6 ID=10A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
15
12
VGS = 4.5V
9
VGS = 10V
6
3
0
5
10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
※ Notes :
ID = 10A
30
20
10 TA = 25℃
0
2 4 6 8 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
※ Notes :
VDS = 5V
12
8
TA=25℃
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
※ Notes :
101 VGS = 0V
TA=25℃
100
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
June. 2011. Version1.2
3 MagnaChip Semiconductor Ltd.
3Pages | |||
| ページ | 合計 : 5 ページ | ||
|
|
PDF ダウンロード | [ MDS1524.PDF ] | |
共有リンク
Link :おすすめデータシート
| 部品番号 | 部品説明 | メーカ |
| MDS1521 | Single N-channel Trench MOSFET | MagnaChip |
| MDS1524 | N-Channel Trench MOSFET | MagnaChip |
| MDS1525 | N-Channel Trench MOSFET | MagnaChip |
| MDS1526 | N-Channel Trench MOSFET | MagnaChip |