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PDF MDU5512 Data sheet ( Hoja de datos )
| Número de pieza | MDU5512 | |
| Descripción | Dual N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDU5512
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5512 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5512 is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
VDS = 30V
ID = 46.1A
VDS = 30V
ID = 80A @VGS = 10V
RDS(ON)
< 8.9mΩ
< 12.5mΩ
< 3.6mΩ @VGS = 10V
< 4.5mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
5
S1/D2
S2
6
S2
S2
7 G2
8
4
1
D1 3
D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
DD1
GG1
SDS1/D2
GG2
SS2
FET1
FET2
30
±20 ±12
46.1 80
29.2 70.4
11.3 18.2
9.0 14.5
100 200
31.3 78.1
12.5 31.3
1.9 2.1
1.2 1.3
53 171
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
FET1
67
4
FET2
60
1.6
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
Nov. 2013 Version 1.1
1 MagnaChip Semiconductor Ltd.
1 page  
FET2 Electrical Characteristics (Ta =25oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 20A
VDS = 5V, ID = 20A
VDS = 15.0V, ID = 20A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 15.0V,
RL = 1.5Ω, RG = 3.0Ω
f=1 MHz
IS = 1.0A, VGS = 0V
IF = 20A, dl/dt = 150A/μs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 32.5A, VDD = 27V, VGS = 10V
Min Typ Max Unit
30 -
-
1.0 1.5 2.0
V
- -1
μA
- - ±0.1
- 2.9 3.6
mΩ
- 3.3 4.5
- 91 - S
57.3
26
-
-
3138
406
180
-
-
-
-
-
76.4
34.7
9.7
9.7
4184
542
241
15.5
10.9
74.9
10.3
1.2
95.5
43.3
-
-
5230
678
301
-
-
-
-
2.0
nC
pF
ns
Ω
-
0.7 1.0
V
-
31.1 40.4
ns
-
40.8 53.0
nC
Nov. 2013 Version 1.1
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MDU5512.PDF ] | |
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