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MDV5524のメーカーはMagnaChipです、この部品の機能は「Dual N-Channel Trench MOSFET」です。 |
部品番号 | MDV5524 |
| |
部品説明 | Dual N-Channel Trench MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDV5524ダウンロード(pdfファイル)リンクがあります。 Total 9 pages
MDV5524
Asymmetric Dual N-channel Trench MOSFET 30V
General Description
The MDV5524 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV5524 is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
VDS = 30V
ID = 24.5A
VDS = 30V
ID = 31.2A @VGS = 10V
RDS(ON)
< 14.4mΩ
< 21.3mΩ
< 12.6mΩ @VGS = 10V
< 15.6mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
S2
5
S2
6
S2
7
G2
8
S1/D2
D1
D14D13D12G11
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TA=25oC
TA=70oC
TC=25oC
TC=100oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Symbol
RθJA
RθJC
DD1
GG1
SDS1/D2
GG2
SS2
FET1
FET2
30
±20 ±12
24.5 31.2
15.5 19.7
8.5 9.9
6.8 7.9
100 125
14.7 20.8
5.9 8.3
1.8 2.1
1.1 1.3
12.1 25.6
-55~150
Unit
V
V
A
A
W
mJ
oC
FET1
70
8.5
FET2
60
6.0
Unit
oC/W
Apr 2012. Version 1.2
1 MagnaChip Semiconductor Ltd.
1 Page 40
VGS = 10V
30
8.0V
5.0V
4.5V
4.0V
20
3.5V
10
3.0V
0
012
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3
1.8
※ Notes :
1.6
1. VGS = 10 V
2. ID = 6 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Area
20
※ Notes :
VDS = 5V
15
10
TJ=25℃
5
0
1234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
25
20
VGS = 4.5V
15
VGS = 10V
10
5
5 10 15 20 25 30 35 40 45 50
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
※ Notes :
35 ID = 6A
30
25
20
15 TA = 25℃
10
5
2 4 6 8 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
VGS = 0V
101
TJ=25℃
100
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Apr 2012. Version 1.2
3 MagnaChip Semiconductor Ltd.
3Pages 40
VGS = 10V
30
4.5V
4.0V
3.5V
20
10 3.0V
0
0.0 0.5 1.0 1.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
16
14
VGS = 4.5V
12
10 VGS = 10V
8
5 10 15 20 25 30
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.8
※ Notes :
1.6
1. VGS = 10 V
2. ID = 9 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Area
150
20
※ Notes :
VDS = 5V
15
10
TJ=25℃
5
40
※ Notes :
I = 9A
D
30
20
10 TA = 25℃
0
2 4 6 8 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V = 0V
GS
101
100
TJ=25℃
0
1234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Apr 2012. Version 1.2
5
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
6 MagnaChip Semiconductor Ltd.
6 Page | |||
ページ | 合計 : 9 ページ | ||
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部品番号 | 部品説明 | メーカ |
MDV5524 | Dual N-Channel Trench MOSFET | MagnaChip |