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Datasheet MDS3603 PDF ( 特性, スペック, ピン接続図 )

部品番号 MDS3603
部品説明 P-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
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MDS3603 Datasheet, MDS3603 PDF,ピン配置, 機能
MDS3603
Single P-Channel Trench MOSFET, -30V, -12A, 10.1m
General Description
The MDS3603 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -12A @VGS = -10V
RDS(ON)
< 8.5m@VGS = -20V
< 10.1m@VGS = -10V
< 14.5m@VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-30
±25
-12
-48
2.5
112.5
-55~150
Rating
50
22
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
May. 2011. Version 1.1
1 MagnaChip Semiconductor Ltd.

1 Page



MDS3603 pdf, ピン配列
50
45 -10.0V
-4.0V
40 -5.0V
-6.0V
35 -8.0V
30 VGS=-3.5V
25
20
15
10 VGS=-3.0V
5
VGS=-2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5
-VDS [V]
Fig.1 On-Region Characteristics
1.8
*Note; ID=-12A
1.6
1.4
VGS=-10V
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100
TJ, Junction Temperature []
125
Fig.3 On-Resistance Variation with
Temperature
150
20
15
VGS= -5V
10
VGS= -10V
5
0
0 10 20 30
-ID [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
30
*Note ; ID=-12A
25
20
15
10
5
2 3 4 5 6 7 8 9 10
-VGS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
30
* Note ; VDS=-5V
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS [V]
Fig.5 Transfer Characteristics
May. 2011. Version 1.1
3
Notes :
VGS = 0V
101
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.


3Pages


MDS3603 電子部品, 半導体
Physical Dimensions
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
May. 2011. Version 1.1
6 MagnaChip Semiconductor Ltd.

6 Page





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