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PDF MDS5652 Data sheet ( Hoja de datos )
| Número de pieza | MDS5652 | |
| Descripción | Dual N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDS5652
Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ
General Description
The MDS5652 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and exellent reliability.
Features
VDS = 30V
ID = 7.5A @VGS = 10V
RDS(ON)
< 22mΩ @VGS = 10V
< 35mΩ @VGS = 4.5V
Applications
Portable Equipment Applications
DC-DC Converter applications
General purpose applications
6(D2)5(D2)
7(D1)
8(D1)
D1 D2
3(S24) (G2)
2(G1)
1(S1)
G1
G2
S1
S2
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation(1)
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
Ta=25oC
Ta=100oC
Ta=25oC
Ta=100oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
7.5
4.8
30
2.0
0.8
12
-55~+150
Unit
V
V
A
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
62.5
50
Unit
oC/W
March. 2009. Version 0.0
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
March. 2009. Version 0.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS5652.PDF ] | |
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