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Datasheet MDV1529E PDF ( 特性, スペック, ピン接続図 )

部品番号 MDV1529E
部品説明 N-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
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MDV1529E Datasheet, MDV1529E PDF,ピン配置, 機能
MDV1529E
Single N-channel Trench MOSFET 30V, 28A, 4.5mΩ
General Description
The MDV1529E uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1529E is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 32V
ID = 28A @VGS = 10V
RDS(ON)
< 4.5mΩ @VGS = 10V
< 6.5mΩ @VGS = 4.5V
DD DD
DD DD
D
S SSG
GS SS
PDFN33
G
S
Absolute Maximum Ratings (Ta = 25oC unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TC=25oC
TC=70oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
30
±20
56.4
28
28
84
27.7
17.7
136
-55~150
Unit
V
V
A
A
W
mJ
oC
Rating
36
4.5
Unit
oC/W
Jul. 2012 Version 1.0
1 MagnaChip Semiconductor Ltd.

1 Page



MDV1529E pdf, ピン配列
20
3.5V
4.0V
4.5V
8.0V
V = 10V
GS
10
3.0V
0
0.0 0.5 1.0 1.5
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
2.0
Notes :
1.8
1. VGS = 10 V
2. ID = 16.0 A
1.6
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
20
Notes :
VDS = 5V
16
12
8 TA=25
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
8
7
6
VGS = 4.5V
5
4
3 VGS = 10V
2
1
0
5 10 15 20
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
Notes :
ID = 16.0A
25
20
15
10
5
TA = 25
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Notes :
VGS = 0V
101
100
TA=25
10-1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jul. 2012 Version 1.0
3 MagnaChip Semiconductor Ltd.


3Pages


MDV1529E 電子部品, 半導体
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Jul. 2012 Version 1.0
6 MagnaChip Semiconductor Ltd.

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