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MDV1529E PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 MDV1529E
部品説明 N-Channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 

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MDV1529E Datasheet, MDV1529E PDF,ピン配置, 機能
MDV1529E
Single N-channel Trench MOSFET 30V, 28A, 4.5mΩ
General Description
The MDV1529E uses advanced MagnaChips MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1529E is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 32V
ID = 28A @VGS = 10V
RDS(ON)
< 4.5mΩ @VGS = 10V
< 6.5mΩ @VGS = 4.5V
DD DD
DD DD
D
S SSG
GS SS
PDFN33
G
S
Absolute Maximum Ratings (Ta = 25oC unless otherwise specified)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TC=25oC
TC=70oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
30
±20
56.4
28
28
84
27.7
17.7
136
-55~150
Unit
V
V
A
A
W
mJ
oC
Rating
36
4.5
Unit
oC/W
Jul. 2012 Version 1.0
1 MagnaChip Semiconductor Ltd.

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