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PDF MDS1656 Data sheet ( Hoja de datos )
| Número de pieza | MDS1656 | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MDS1656 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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MDS1656
Single N-Channel Trench MOSFET 30V, 7.2A, 28mΩ
General Description
The MDS1656 uses advanced MagnaChip’s trench MOSFET
Technology to provide high performance in on-state resistance,
switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in
the application.
Features
VDS = 30V
ID = 7.2A @VGS = 10V
RDS(ON)
< 28mΩ @VGS = 10V
< 42mΩ @VGS = 4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
D
4(G)
3(S)
2(S)
1(S)
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy(2)
Junction and Storage Temperature Range
TC=25oC
TC=70oC
TC=25oC
TC=70oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)(1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
S
Rating
30
±20
7.2
6.2
30
2
1.44
20
-55~150
Rating
100
60
Unit
V
V
A
A
A
W
mJ
oC
Unit
oC/W
August 2008. Version 1.0
1 MagnaChip Semiconductor Ltd.
1 page  
Physical Dimensions
8 Leads SOIC
Dimensions are in millimeters unless otherwise specified
August 2008. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDS1656.PDF ] | |
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