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MDU3605のメーカーはMagnaChipです、この部品の機能は「P-Channel Trench MOSFET」です。 |
部品番号 | MDU3605 |
| |
部品説明 | P-Channel Trench MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDU3605ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
MDU3605
Single P-Channel Trench MOSFET, -30V, -35.6A, 17.0mΩ
General Description
The MDU3605 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -35.6A @VGS = -10V
RDS(ON)
< 17.0mΩ @VGS = -10V
< 27.0mΩ @VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
D D DD
D D DD
D
S S SG
GS SS
PowerDFN56
G
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25 oC (Silicon limited)
TA=25oC
TC=25oC
TA=25oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
S
Rating
-30
±25
-35.6
-9.4
-80.0
35.7
2.5
78.1
-55~150
Unit
V
V
A
A
W
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
August. 2011. Version 1.1
(Note 1)
1
Symbol
RθJA
RθJC
Rating
50
3.5
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 Page 50
45 -10.0V
40 -5.0V
35 -6.0V
30 -8.0V
VGS=-4.0V
25
20
15 VGS=-3.5V
10
5 VGS=-3.0V
VGS=-2.5V
0
01234
-VDS [V]
Fig.1 On-Region Characteristics
5
1.8
*Note; ID=-8A
1.6
1.4
1.2
VGS=-10V
1.0
0.8
0.6
-50
-25
0 25 50 75 100
TJ, Junction Temperature [℃]
125
Fig.3 On-Resistance Variation with
Temperature
150
40
35
30
25
VGS=-5V
20
15 VGS=-10V
10
5
0
0 10 20 30
-ID [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
40
40
*Note ; ID=-8A
35
30
25
20
15
10
5
2 3 4 5 6 7 8 9 10
-VGS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
30
* Note ; VDS=-5V
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VGS [V]
Fig.5 Transfer Characteristics
August. 2011. Version 1.1
3
※ Notes :
VGS = 0V
101
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-VSD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
3Pages DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
August. 2011. Version 1.1
6 MagnaChip Semiconductor Ltd.
6 Page | |||
ページ | 合計 : 6 ページ | ||
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PDF ダウンロード | [ MDU3605 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MDU3603 | P-Channel Trench MOSFET | MagnaChip |
MDU3605 | P-Channel Trench MOSFET | MagnaChip |