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MDU1721のメーカーはMagnaChipです、この部品の機能は「Single N-channel Trench MOSFET」です。 |
部品番号 | MDU1721 |
| |
部品説明 | Single N-channel Trench MOSFET | ||
メーカ | MagnaChip | ||
ロゴ | |||
このページの下部にプレビューとMDU1721ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
MDU1721
Single N-channel Trench MOSFET 40V, 100A, 1.4mΩ
General Description
The MDU1721 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU1721 is suitable device for Synchronous
Rectification For Server and general purpose applications.
Features
VDS = 40V
ID = 100A @VGS = 10V
RDS(ON)
< 1.4mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN56
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
TC=25oC (Silicon Limited)
TC=25oC (Package Limited)
TC=100oC
TA=25oC(3)
TC=25oC
TC=100oC
TA=25oC(3)
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Dec. 2013. Rev. 1.1
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
40
±20
204.1
100.0
129.1
32.9(3)
400.0
96.2
38.5
2.5(3)
450
-55~150
Unit
V
V
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
1.3
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 Page 100
90
80
70
60
50
40
30
20
10
0
0.0
4.0V
5.0V
6.0V
VGS = 10V
3.0V
0.2 0.4 0.6 0.8
VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.0
1.8
※ Notes :
1. VGS = 10 V
1.6 2. ID = 50.0 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
VGS = 10V
10 20 30 40 50 60 70 80 90 100
ID, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
10
9 ※ Notes :
ID = 50.0A
8
7
6
5
4
3
TA = 25℃
2
1
0
2 3 4 5 6 7 8 9 10
VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
16
※ Notes :
VDS = 10V
12
8
TA=25℃
4
0
01234
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
5
Dec. 2013. Rev. 1.1
3
※ Notes :
100
V = 0V
GS
10
TA=25℃
1
0.0 0.3 0.6 0.9 1.2 1.5
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.
3Pages DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Dec. 2013. Rev. 1.1
6 MagnaChip Semiconductor Ltd.
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ MDU1721 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MDU1721 | Single N-channel Trench MOSFET | MagnaChip |
MDU1722 | Single N-channel Trench MOSFET | MagnaChip |