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MDS3753E データシート PDF ( 特性, スペック, ピン接続図 )

部品番号 MDS3753E
部品説明 P-channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 

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MDS3753E Datasheet, MDS3753E PDF,ピン配置, 機能
MDS3753E
P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ
General Description
The MDS3753E uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance, high
switching performance and excellent reliability
Low RDS(ON) and low gate charge operation offer superior
benefit in the application.
Features
VDS = -40V
ID = -7.1A @ VGS = 10V
RDS(ON)
<30m@ VGS = -10V
<37m@ VGS = -4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (TA =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
-40
±20
-7.1
-50
2.5
98
-55~150
Rating
50
25
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
Nov 2011 Version 1.1
1 MagnaChip Semiconductor Ltd.

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