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Datasheet MDS3753E PDF ( 特性, スペック, ピン接続図 )

部品番号 MDS3753E
部品説明 P-channel Trench MOSFET
メーカ MagnaChip
ロゴ MagnaChip ロゴ 
プレビュー
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MDS3753E Datasheet, MDS3753E PDF,ピン配置, 機能
MDS3753E
P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ
General Description
The MDS3753E uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance, high
switching performance and excellent reliability
Low RDS(ON) and low gate charge operation offer superior
benefit in the application.
Features
VDS = -40V
ID = -7.1A @ VGS = 10V
RDS(ON)
<30m@ VGS = -10V
<37m@ VGS = -4.5V
Applications
Inverters
General purpose applications
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (TA =25oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
-40
±20
-7.1
-50
2.5
98
-55~150
Rating
50
25
Unit
V
V
A
A
W
mJ
oC
Unit
oC/W
Nov 2011 Version 1.1
1 MagnaChip Semiconductor Ltd.

1 Page



MDS3753E pdf, ピン配列
20
V = -10V
GS
-5.0V
15 -6.0V
-4.0V
-4.5V
-3.5V
10
-3.0V
5
0
0.0 0.5 1.0 1.5
-VDS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.0
1.8
Notes :
1. VGS = -10 V
1.6 2. ID = -3.3 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Area
150
20
Notes :
VDS = -10V
16
12
TA=25
8
4
0
012345
-VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
60
50
40
30 VGS = -4.5V
20
VGS = -10V
10
5 10 15
Fig.2 On-Re-sIDi,sDtraainn cCuerreVnat [rAi]ation with
Drain Current and Gate Voltage
20
100
80
60
40 TA = 125
20
TA = 25
0
2468
-VGS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
10
Notes :
101 VGS = 0V
100
TA=125
25
10-1
0.2
0.4 0.6 0.8 1.0
-V , Source-Drain voltage [V]
SD
1.2
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov 2011 Version 1.1
3 MagnaChip Semiconductor Ltd.


3Pages


MDS3753E 電子部品, 半導体
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Nov 2011 Version 1.1
6 MagnaChip Semiconductor Ltd.

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