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PDF MDD1902 Data sheet ( Hoja de datos )
| Número de pieza | MDD1902 | |
| Descripción | Single N-channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDD1902
Single N-channel Trench MOSFET 100V, 40A, 28mΩ
General Description
The MDD1902 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDD1902 is suitable device for DC/DC
Converters and general purpose applications.
Features
VDS = 100V
ID = 40A @VGS = 10V
RDS(ON)
< 28mΩ @VGS = 10V
< 31mΩ @VGS = 6.0V
D
G
S
Absolute Maximum Ratings (Tc = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
TC=100oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case (1)
Nov. 2010. Version 1.0
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
100
±20
40
25
80
83
33
200
-55~150
Unit
V
V
A
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
50
1.5
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
Package Dimension
D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified
Nov. 2010. Version 1.0
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MDD1902.PDF ] | |
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