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C2M0280120D の電気的特性と機能

C2M0280120DのメーカーはCreeです、この部品の機能は「Silicon Carbide Power MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 C2M0280120D
部品説明 Silicon Carbide Power MOSFET
メーカ Cree
ロゴ Cree ロゴ 




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C2M0280120D Datasheet, C2M0280120D PDF,ピン配置, 機能
VDS 1200 V
C2M0280120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C 10 A
RDS(on)
280 m
N-Channel Enhancement Mode
Features
Package
New C2M SiC MOSFET technlogy
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Resistant to Latch-Up
Halogen Free, RoHS Compliant
Benefits
TO-247-3
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
LED Lighting Power Supplies
High Voltage DC/DC Converters
Industrial Power Supplies
HVAC
Part Number
C2M0280120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
1200
-10/+25
-5/+20
10
6
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 20 V, TC = 25 °C
VGS = 20 V, TC = 100 °C
Fig. 19
ID(pulse) Pulsed Drain Current
20 A Pulse width tP limited by Tjmax
Fig. 22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
62.5
-55 to
+150
260
1
8.8
W TC=25 °C, TJ = 150 °C
˚C
Fig. 20
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M0280120D Rev. A

1 Page





C2M0280120D pdf, ピン配列
Typical Performance
16
Conditions:
14
TJ = -55 °C
tp < 200 µs
VGS = 20 V
12 VGS = 18 V
10
VGS = 16 V
VGS = 14 V
8
VGS = 12 V
6
4
2 VGS = 10 V
0
0.0
2.5 5.0 7.5 10.0
Drain-Source Voltage, VDS (V)
12.5
Figure 1. Output Characteristics TJ = -55 °C
16
Conditions:
14
TJ = 150 °C
tp < 200 µs
12
10
8
VGS = 14 V
VGS = 16 V
VGS = 18 V
VGS = 20 V
VGS = 12 V
VGS = 10 V
6
4
2
0
0.0
2.5 5.0 7.5 10.0
Drain-Source Voltage, VDS (V)
12.5
Figure 3. Output Characteristics TJ = 150 °C
800
Conditions:
700
VGS = 20 V
tp < 200 µs
600
500
TJ = 150 °C
400
300 TJ = 25 °C
200 TJ = -55 °C
100
0
0 2 4 6 8 10 12
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
14
16
Conditions:
14
TJ = 25 °C
tp < 200 µs
VGS = 20 V
VGS = 18 V
12 VGS = 16 V
10
VGS = 14 V
VGS = 12 V
8
6 VGS = 10 V
4
2
0
0.0
2.5 5.0 7.5 10.0
Drain-Source Voltage, VDS (V)
12.5
Figure 2. Output Characteristics TJ = 25 °C
2.0
Conditions:
1.8 IDS = 6 A
VGS = 20 V
1.6 tp < 200 µs
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0 25 50 75 100
Junction Temperature, TJ (°C)
125
150
Figure 4. Normalized On-Resistance vs. Temperature
700
Conditions:
IDS = 6 A
600 tp < 200 µs
500
VGS = 14 V
400
VGS = 16 V
300 VGS = 18 V
200 VGS = 20 V
100
0
-50
-25
0 25 50 75 100
Junction Temperature, TJ (°C)
125
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
3 C2M0280120D Rev. A


3Pages


C2M0280120D 電子部品, 半導体
Typical Performance
12
Conditions:
TJ ≤ 150 °C
10
8
6
4
2
0
-55
-5 45 95
Case Temperature, TC (°C)
145
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
1 0.5
0.3
100E-3
0.1
0.05
0.02
10E-3
0.01
SinglePulse
1E-3
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
Figure 21. Transient Thermal Impedance
(Junction - Case)
350
Conditions:
300
TJ = 25 °C
VDD = 800 V
RG(ext) = 2.5
250
VGS = -5/+20 V
FWD = C4D02120A
L = 412 μH
200
ETotal
150 EOn
100
EOff
50
0
0 2 4 6 8 10 12 14 16
Drain to Source Current, IDS (A)
1
18
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
70
Conditions:
TJ ≤ 150 °C
60
50
40
30
20
10
0
-55
-5 45 95
Case Temperature, TC (°C)
145
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
10.00
Limited by RDS On
1.00
1 ms
10 µs
100 µs
100 ms
0.10
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.01
0.1
1
10 100
Drain-Source Voltage, VDS (V)
1000
Figure 22. Safe Operating Area
250
Conditions:
TJ = 25 °C
200
VDD = 600 V
RG(ext) = 2.5
VGS = -5/+20 V
FWD = C4D02120A
L = 412 μH
150
100
ETotal
EOn
EOff
50
0
0 2 4 6 8 10 12 14 16 18
Drain to Source Current, IDS (A)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
6 C2M0280120D Rev. A

6 Page



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部品番号部品説明メーカ
C2M0280120D

Silicon Carbide Power MOSFET

Cree
Cree


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