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MT3710 の電気的特性と機能

MT3710のメーカーはMOS-TECHです、この部品の機能は「N-Channel Powe MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 MT3710
部品説明 N-Channel Powe MOSFET
メーカ MOS-TECH
ロゴ MOS-TECH ロゴ 




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MT3710 Datasheet, MT3710 PDF,ピン配置, 機能
MOS-TECH Semiconductor Co.,LTD
Feb 2010
MT3710
N-Channel Power® MOSFET
100V, 57A, 12m
Features
• RDS(on) = 12m( Typ.) @ VGS = 10V, ID = 49A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-220
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 2)
(Note 3)
S
Ratings
100
±20
57
40
228
132
7.5
110
0.88
-55 to +150
300
Ratings
1.13
0.5
62.5
Units
V
V
A
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2010 MOS-TECH Semiconductor Corporation
MT3710 Rev. A
1
www.mtsemi.com

1 Page





MT3710 pdf, ピン配列
Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
100 6.5 V
6.0 V
5.5 V
10
2
0.02
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
0.1 1
VDS,Drain-Source Voltage[V]
10
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
30
25
20
VGS = 10V
15
VGS = 20V
10
*Note: TC = 25oC
5
0 100 200 300
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
5000
4000
Ciss
*Note:
1. VGS = 0V
2. f = 1MHz
3000
2000
1000
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
0
0.1 1 10
VDS, Drain-Source Voltage [V]
30
MT3710 Rev. A
3
Figure 2. Transfer Characteristics
1000
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
100
150oC
10 25oC
-55oC
1
345678
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
500
150oC
100
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 25V
8
VDS = 50V
VDS = 80V
6
4
2
*Note: ID = 49A
0
0 10 20 30 40 50 60
Qg, Total Gate Charge [nC]
www.mtsemi.com


3Pages


MT3710 電子部品, 半導体
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
MT3710 Rev. A
6 www.mtsemi.com

6 Page



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部品番号部品説明メーカ
MT3710

N-Channel Powe MOSFET

MOS-TECH
MOS-TECH


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