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MT3055LのメーカーはMOS-TECHです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
部品番号 | MT3055L |
| |
部品説明 | N-Channel Power MOSFET / Transistor | ||
メーカ | MOS-TECH | ||
ロゴ | |||
このページの下部にプレビューとMT3055Lダウンロード(pdfファイル)リンクがあります。 Total 6 pages
茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
MT3055L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
● Super high dense cell design for low RDS(ON)
● Rugged and reliable
● Simple drive requirement
● TO-252 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
25V 15A
55 @ VGS=4.5V
60 @ VGS=2.5V
NOTE:The MT3055L is available
in a lead-free package
S
GG
D
S
D
G
S
ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousª@Tj=125℃
Symbol
VDS
VGS
ID
Limit
25
±12
15
- Pulse d b
IDM 48
Drain-source Diode Forward Currentª
Maximum Power Dissipationª
Operating Junction and Storage
Temperature Range
IS
PD
TJ,TSTG
1.7
55
-55 to 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50 ℃/W
©2005 Mos-Tech Semiconductor
1
http//www.mtsemi.com
1 Page 茂钿半導體股份有限公司
Mos-Tech Semiconductor Co.,LTD.
ELECTRICAL CHARACTERICS (TA=25℃ unless otherwise noted)
MT3055L
Parameter
Symbol
Condition
Min Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V,IS=1.25A
0.84 1.2 V
Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty Cycle≦2%
c. Guaranteed by design, not subject to production testing.
VDS, Drain-to-Source Voltage (V)
Figure 1.Output Characteristics
VGS, Gate-to-source Voltage (V)
Figure 2.Transfer Characteristics
VGS=4V
ID=3A
VGS, Drain-to Source Voltage
Figure3.Capacitance
©2005 Mos-Tech Semiconductor
3
Figure4. On-Resistance Variation with
Temperature
http//www.mtsemi.com
3Pages MOS-TECH Semiconductor Co.,LTD
⊼ᛣ
ᴀ᭛াᰃখ㗗䆥᭛ˈࠡ义᠔䕑㣅᭛⠜“Cautions”᳝ℷᓣᬜDŽ
݇Ѣ߽⫼ᴀ䌘᭭ᯊⱘ⊼ᛣџ乍
1. ᴀ䌘᭭ᰃЎњ䅽⫼᠋ḍ⫼䗨䗝ᢽড়䗖ⱘᴀ݀ৌѻકⱘখ㗗䌘᭭ˈᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘᡔᴃֵᙃˈᑊ䴲ᛣ
ੇⴔᇍᴀ݀ৌ㗙ϝ㗙ⱘⶹ䆚ѻᴗঞ݊Ҫᴗ߽خߎֱ䆕ᇍᅲᮑᴗ䖯㸠ⱘᡓ䇎DŽ
2. ᇍѢՓ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ǃᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟㗠ᓩ䍋ⱘᤳᆇ㗙ᇍϝ㗙ⱘ
ⶹ䆚ѻᴗঞ݊Ҫᴗ߽䗴៤։⢃ˈᴀ݀ৌϡᡓᢙӏԩ䋷ӏDŽ
3. ϡ㛑ᇚᴀ䌘᭭᠔䆄䕑ⱘѻકᡔᴃ⫼Ѣ㾘⸈ണᗻ℺఼ⱘᓔথㄝⳂⱘǃݯџⳂⱘ݊Ҫⱘݯ䳔⫼䗨ᮍ䴶DŽ
ˈߎষᯊᖙ乏䙉ᅜ中国ⱘlj∛ঞ䌌ᯧ⊩NJঞ݊ҪߎষⱘⳌ݇⊩Ҹᑊሹ㸠䖭ѯ⊩ҸЁ㾘ᅮⱘᖙ㽕
㓁DŽ
4. ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ǃᑣǃㅫ⊩ҹঞ݊Ҫᑨ⫼⬉䏃՟ㄝ᠔ֵ᳝ᙃഛЎᴀ䌘᭭থ㸠ᯊⱘݙᆍˈ
ᴀ݀ৌ᳝ৃ㛑خџܜ䗮ⶹⱘᚙމϟˈᇍᴀ䌘᭭᠔䆄䕑ⱘѻક㗙ѻક㾘Ḑ䖯㸠ᬍDŽ᠔ҹ䌁фՓ⫼
ᴀ݀ৌⱘञᇐԧѻકПࠡˈ䇋џܜᴀ݀ৌⱘ㧹Ϯにষ⹂䅸᳔ᮄⱘֵᙃᑊ㒣ᐌ⬭ᛣᴀ݀ৌ䗮䖛݀ৌЏ义
(http://www.mtsemi.com)ㄝ݀ᓔⱘ᳔ᮄֵᙃDŽ
5. ᇍѢᴀ䌘᭭Ё᠔䆄䕑ⱘֵᙃˈࠊᯊ៥Ӏሑֱ䆕ߎ⠜ᯊⱘ㊒⹂ᗻˈԚϡᡓᢙᴀ䌘᭭ⱘভ䗄ϡᔧ㗠㟈Փ乒
ᅶ䙁ফᤳ༅ㄝⱘӏԩⳌ݇䋷ӏDŽ
6. Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻક᭄ǃǃ㸼ㄝ᠔⼎ⱘᡔᴃݙᆍǃᑣǃㅫ⊩ঞ݊Ҫᑨ⫼⬉䏃՟ᯊˈϡҙ㽕ᇍ᠔
Փ⫼ⱘᡔᴃֵᙃ䖯㸠ऩ⣀䆘Ӌˈ䖬㽕ᇍᭈϾ㋏㒳䖯㸠ܙߚⱘ䆘ӋDŽ䇋乒ᅶ㞾㸠䋳䋷ˈ䖯㸠ᰃ৺䗖⫼ⱘ߸ᮁDŽ
ᴀ݀ৌᇍѢᰃ৺䗖⫼ϡ䋳ӏԩ䋷ӏDŽ
7. ᴀ䌘᭭Ё᠔䆄䕑ⱘѻકᑊ䴲䩜ᇍϛϔߎ⦄ᬙ䱰ᰃ䫭䇃䖤㸠ህӮ࿕㚕ࠄҎⱘ⫳ੑ㒭Ҏԧᏺᴹॅᆇⱘᴎ఼ǃ
㋏㒳བ⾡ᅝܼ㺙㕂㗙䖤䕧Ѹ䗮⫼ⱘǃए⭫ǃ➗⚻ࠊǃ㟾఼ẄǃḌ㛑ǃ⍋ᑩЁ㒻⫼ⱘᴎ఼㋏㒳ㄝ
㗠䆒䅵ࠊ䗴ⱘ⡍߿ᰃᇍѢક䋼ৃ䴴ᗻ㽕∖ᵕ催ⱘᴎ఼㋏㒳ㄝ˄ᇚᴀ݀ৌᣛᅮ⫼Ѣ≑䔺ᮍ䴶ⱘѻક⫼
Ѣ≑䔺ᯊ䰸˅DŽབᵰ㽕⫼ѢϞ䗄ⱘⳂⱘˈ䇋ࡵᖙџܜᴀ݀ৌⱘ㧹Ϯにষ䆶DŽˈᇍѢ⫼ѢϞ䗄Ⳃⱘ
㗠䗴៤ⱘᤳ༅ㄝˈᴀ݀ৌὖϡ䋳䋷DŽ
8. 䰸Ϟ䗄乍ݙᆍˈϡ㛑ᇚᴀ䌘᭭Ё䆄䕑ⱘѻક⫼Ѣҹϟ⫼䗨DŽབᵰ⫼Ѣҹϟ⫼䗨㗠䗴៤ⱘᤳ༅ˈᴀ݀ৌ
ὖϡ䋳䋷DŽ
1˅⫳ੑ㓈ᣕ㺙㕂DŽ
2˅ỡඟѢҎԧՓ⫼ⱘ㺙㕂DŽ
3˅⫼Ѣ⊏⭫˄ߛ䰸ᙷ䚼ǃ㒭㥃ㄝ˅ⱘ㺙㕂DŽ
4˅݊ҪⳈᕅડࠄҎⱘ⫳ੑⱘ㺙㕂DŽ
9. Փ⫼ᴀ䌘᭭᠔䆄䕑ⱘѻકᯊˈᇍѢ᳔乱ᅮؐǃᎹ⬉⑤⬉य़ⱘ㣗ೈǃᬒ⛁⡍ᗻǃᅝ㺙ᴵӊঞ݊Ҫᴵӊ䇋
ᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈݙՓ⫼DŽབᵰ䍙ߎњᴀ݀ৌ㾘ᅮⱘֱ䆕㣗ೈՓ⫼ᯊˈᇍѢ⬅ℸ㗠䗴៤ⱘᬙ䱰ߎ⦄
ⱘџᬙˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
10.ᴀ݀ৌϔⳈ㟈Ѣᦤ催ѻકⱘ䋼䞣ৃ䴴ᗻˈԚϔ㠀ᴹ䇈ˈञᇐԧѻકᘏӮҹϔᅮⱘὖ⥛থ⫳ᬙ䱰ǃ㗙⬅
ѢՓ⫼ᴵӊϡৠ㗠ߎ⦄䫭䇃䖤㸠ㄝDŽЎњ䙓ܡᴀ݀ৌⱘѻકথ⫳ᬙ䱰㗙䫭䇃䖤㸠㗠ᇐ㟈Ҏ䑿џᬙ☿♒
䗴៤⼒Ӯᗻⱘᤳ༅ˈᏠᳯᅶ᠋㛑㞾㸠䋳䋷䖯㸠ݫԭ䆒䅵ǃ䞛পᓊ⚻ᇍㄪঞ䖯㸠䰆ℶ䫭䇃䖤㸠ㄝⱘᅝܼ䆒䅵
˄ࣙᣀ⹀ӊ䕃ӊϸᮍ䴶ⱘ䆒䅵˅ҹঞ㗕࣪໘⧚ㄝˈ䖭ᰃЎᴎ఼㋏㒳ⱘߎॖֱ䆕DŽ⡍߿ᰃऩ⠛ᴎⱘ䕃ӊˈ
⬅Ѣऩ⣀䖯㸠偠䆕ᕜೄ䲒ˈ᠔ҹ㽕∖乒ᅶࠊ䗴ⱘ᳔㒜ⱘᴎ఼ঞ㋏㒳Ϟ䖯㸠ᅝܼẔ偠ᎹDŽ
11. བᵰᡞᴀ䌘᭭᠔䆄䕑ⱘѻકҢ݊䕑ԧ䆒Ϟौϟˈ᳝ৃ㛑䗴៤၈ܓ䇃৲ⱘॅ䰽DŽ乒ᅶᇚᴀ݀ৌѻકᅝ㺙ࠄ
乒ᅶⱘ䆒Ϟᯊˈ䇋乒ᅶ㞾㸠䋳䋷ᇚᴀ݀ৌѻક䆒㕂Ўϡᆍᯧ࠹㨑ⱘᅝܼ䆒䅵DŽབᵰҢ乒ᅶⱘ䆒Ϟ࠹㨑㗠
䗴៤џᬙᯊˈᴀ݀ৌᇚϡᡓᢙӏԩ䋷ӏDŽ
12.ᕫࠄᴀ݀ৌⱘџܜк䴶䅸ৃᯊˈϡৃᇚᴀ䌘᭭ⱘϔ䚼ߚ㗙ܼ䚼䕀䕑㗙ࠊDŽ
13.བᵰ䳔㽕њ㾷݇Ѣᴀ䌘᭭ⱘ䆺㒚ݙᆍˈ㗙᳝݊Ҫ݇ᖗⱘ䯂乬ˈ䇋ᴀ݀ৌⱘ㧹Ϯにষ䆶DŽ
Keep safety first in your circuit designs!
1. MOS-TECH Semiconductor Corp. puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
©20 0267(&+ Semiconductor CorporationZZZPWVHPLFRP
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部品番号 | 部品説明 | メーカ |
MT3055L | N-Channel Power MOSFET / Transistor | MOS-TECH |