|
|
|
|
MT2030のメーカーはMOS-TECHです、この部品の機能は「N-Channel Power MOSFET」です。 このページではMT2030の詳細な仕様と技術情報(パラメータ、電気的特性、ピン配置など)を見つけることができます. |
MT2030 の電気的特性と機能
| 部品番号 | MT2030 |
| |
| 部品説明 | N-Channel Power MOSFET | ||
| メーカ | MOS-TECH | ||
| ロゴ |  |
||
このページの下部にプレビューとMT2030ダウンロード（pdfファイル）リンクがあります。 Total 9 pages
MOS-TECH Semiconductor Co.,LTD
M7
N-Channel Power® MOSFET
30 V, A, 1.5 mΩ
Features
Max rDS(on) = 17.5 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 24.5 mΩ at VGS = 4.5 V, ID = 10 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
November 2010
General Description
This N-Channel MOSFET is produced using MOS-TECH
Semiconductor’s advanced Power® process that has
been especially tailored to minimize the on-state resistance.This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC/DC Buck Converters
Notebook battery power management
Load Switch in Notebook
D
1 TO-251&TO-126
1. Gata 2.Drain 3.Source
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
20
38
12
50
21
25
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
5.0
53
°C/W
Device Marking
MT2030
Device
MT2030
Package
TO-251&126
Reel Size
-
Tape Width
-
Quantity
50 units
©2010 MOS-TECH Semiconductor Corporation
MT2030 Rev.A0
1
www.mtsemi.com
1 Page  
Typical Characteristics TJ = 25 °C unless otherwise noted
50
40
30
20
10
0
0.0
VGS = 10 V
VGS = 6 V
VGS = 4.5 V
VGS = 4.0 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.5 1.0 1.5 2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.5
Figure 1. On Region Characteristics
6
VGS = 3.5 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
3 VGS = 4.0 V
2 VGS = 4.5 V
1
VGS = 6 V VGS = 10 V
0
0 10 20 30 40 50
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
ID = 12 A
VGS = 10 V
1.4
1.2
1.0
0.8
0.6
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs Junction Temperature
40
35
30
25
20
15
10
5
0
2
ID = 12 A
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
TJ = 25 oC
468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
40
VDS = 5 V
30
TJ = 150 oC
20
TJ = 25 oC
10
0
1
TJ = -55 oC
234
VGS, GATE TO SOURCE VOLTAGE (V)
5
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
TJ = 150 oC
1
0.1
0.01
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8 1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2010 MOS-TECH Semiconductor Corporation
MT2030 Rev.A0
3
www.mtsemi.com
3Pages 
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
0.75 ±0.10
1.60 ±0.10
0.75 ±0.10
#1
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
(1.00)
(0.50)
1.75 ±0.20
0.50
+0.10
–0.05
©2011 MOS-TECH Semiconductor Corporation
MT2030 Rev.A
6
Dimensions in Millimeters
www.mtsemi.com
6 Page | |||
| ページ | 合計 : 9 ページ | ||
|
|
PDF ダウンロード | [ MT2030 datasheet.PDF ] | |
|
MT2030 データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 また、MT2030のさまざまなアプリケーション回路とユースケースを使用して独自の設計に統合する方法を理解するのに役立ちます。 |
共有リンク
Link :おすすめデータシート
|
あなたの検索基準に基づいて、興味のある他のデータシートを見つけました。同様の部品も一緒に検討することをお勧めします。 |
| 部品番号 | 部品説明 | メーカ |
| MT2030 | N-Channel Power MOSFET | MOS-TECH |