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PDF MT6680 Data sheet ( Hoja de datos )
| Número de pieza | MT6680 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | MOS-TECH | |
| Logotipo |  |
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MOS-TECH Semiconductor Co.,LTD
MT6680
N-Channel Power MOSFET
30V, 15A, 9.0mΩ
Features
Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A
Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A
HBM ESD protection level of 3KV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
General Description
This N-Channel MOSFET is produced using Mos-tech
Semiconductor’s advanced Power mosfet process that has
been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
D
D
D
D
SO-8
Pin 1
G
S
S
S
D
D
D
D
G
S
S
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
MT6680
Device
MT6680
Reel Size
13”
(Note 1a)
(Note 4)
(Note 1a)
(Note 1b)
Ratings
30
±20
15
60
181
2.5
1.0
-55 to +150
Units
V
V
A
mJ
W
°C
(Note 1)
(Note 1a)
(Note 1b)
25
50
125
°C/W
Tape Width
12mm
Quantity
2500 units
©2011 MOS-TECH Semiconductor Corporation
MT6680 Rev.B
1
www.mtsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2000
1000
VGS = 10V
100
10
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1----5---0-1---2-–--5---T---A---
TA = 25oC
1
0.2
10-4
SINGLE PULSE
RθJA = 125oC/W
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Single Pulse Maximum Power Dissipation
102
2
1
0.1
0.01
0.001
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125oC/W
PDM
t1
t2
NOES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.0002
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
102
103
103
MT6680 Rev.B
5
www.mtsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MT6680.PDF ] | |
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