|
|
MT6010のメーカーはMOS-TECHです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。 |
部品番号 | MT6010 |
| |
部品説明 | N-Channel Power MOSFET / Transistor | ||
メーカ | MOS-TECH | ||
ロゴ | |||
このページの下部にプレビューとMT6010ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
MOS-TECH Semiconductor Co.,LTD
MT6010
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Mos-tech’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Features
• 15A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
GDS
TO-220
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
- Derate above 25°C
(Note 3)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
D
!
"
!"
G!
"
"
!
S
MT6010
60
15
10.1
50
± 25
105
20
5.3
7.0
53
0.35
-55 to +175
300
Typ Max
-- 2.85
0.5 --
-- 62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
1 Page Typical Characteristics
Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom: 5.0V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
VDS, Drain-Source Voltage [V]
101
Figure 1. On-Region Characteristics
100
80
VGS = 10V
60 VGS = 20V
40
20
※ Note : TJ = 25℃
0
0 10 20 30 40 50 60
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
800
400
Coss
Ciss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1 100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
101
100 175℃
25℃
10-1
2
-55℃
※ Notes :
1.
2.
2V5D0Sμ=
25V
s Pulse
Test
468
VGS, Gate-Source Voltage [V]
10
Figure 2. Transfer Characteristics
101
100
10-1
0.2
175℃
0.4
25℃
※ Notes :
1.
2.
2V5G0Sμ=
0V
s Pulse
Test
0.6 0.8 1.0
VSD, Source-Drain voltage [V]
1.2
1.4
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10 VDS = 30V
VDS = 48V
8
6
4
2
※ Note : ID = 20A
0
0 2 4 6 8 10 12
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©201 0267(&+ Semiconductor Corporation
Rev. A1. 201
3Pages Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
I SD
Driver
RG
VGS
+
VDS
_
L
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e---P-u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©201 0267(&+ Semiconductor Corporation
Rev. A1.201
6 Page | |||
ページ | 合計 : 7 ページ | ||
|
PDF ダウンロード | [ MT6010 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
MT6010 | N-Channel Power MOSFET / Transistor | MOS-TECH |
MT6011 | P-Channel Power MOSFET | MOS-TECH |