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SM3410NSQG の電気的特性と機能

SM3410NSQGのメーカーはSinopowerです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 SM3410NSQG
部品説明 N-Channel Enhancement Mode MOSFET
メーカ Sinopower
ロゴ Sinopower ロゴ 




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SM3410NSQG Datasheet, SM3410NSQG PDF,ピン配置, 機能
SM3410NSQG
Features
60V/50Aa,
RDS(ON) = 8.8m(max.) @ VGS =10V
RDS(ON) = 10.8m(max.) @ VGS =4.5V
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
SS SG
DFN3.3x3.3-8
(5,6,7,8)
DD DD
Applications
(4) G
Synchronous Rectification.
DC-DC Converter.
Load Switch.
Ordering and Marking Information
SSS
( 1, 2, 3 )
N-Channel MOSFET
SM3410NS
SM3410NS QG :
Assembly Material
Handling Code
Temperature Range
Package Code
SM
3410N
XXXXX
Package Code
QG : DFN3.3x3.3-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
1
www.sinopowersemi.com

1 Page





SM3410NSQG pdf, ピン配列
SM3410NSQG
®
Electrical Characteristics (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) e Drain-Source On-state Resistance
Diode Characteristics
VSD e Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Dynamic Characteristics f
VGS=0V, IDS=250µA
VDS=48V, VGS=0V
TJ =85° C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=20A
VGS=4.5V, IDS=20A
ISD=10A, VGS=0V
ISD=20A, dlSD/dt=100A/µs
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics f
VGS=0V,VDS=0V,f=1MHz
VGS=0V,
VDS =30V,
Fr equenc y=1.0MHz
VDD=30V, RL=30,
IDS=1A, VGEN=10V,
RG=6
Qg Total Gate Charge
VDS=30V, VGS=4.5V,
IDS=20A
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=30V, VGS=10V,
IDS=20A
Note ePulse test ; pulse width300µs, duty cycle2%.
Note fGuaranteed by design, not subject to production testing.
Min.
60
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
2
-
7.3
8.3
0.8
26
29
1
2950
220
140
19
10
62
22
28
60
12
12
Max.
-
1
30
3
±100
8.8
10.8
1.3
-
-
-
3835
-
-
35
18
112
40
-
84
-
-
Unit
V
µA
V
nA
m
m
V
ns
nC
pF
ns
nC
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
3
www.sinopowersemi.com


3Pages


SM3410NSQG 電子部品, 半導体
SM3410NSQG
Typical Operating Characteristics (Cont.)
®
Drain-Source On Resistance
2.5
V =10V
GS
I =20A
DS
2.0
1.5
1.0
0.5
R @T =25oC:
ON j
7.3m
0.0
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Capacitance
4800
4200
Frequency=1MHz
3600
3000
Ciss
2400
1800
1200
600
0 Crss
08
Coss
16 24 32 40
V - Drain - Source Voltage (V)
DS
Source-Drain Diode Forward
100
T =150oC
10 j
T =25oC
j
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
Gate Charge
10
V =30V
DS
9 I =20A
DS
8
7
6
5
4
3
2
1
00 10 20 30 40 50 60
Q - Gate Charge (nC)
G
Copyright © Sinopower Semiconductor, Inc.
Rev. A.1 - October, 2014
6
www.sinopowersemi.com

6 Page



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部品番号部品説明メーカ
SM3410NSQG

N-Channel Enhancement Mode MOSFET

Sinopower
Sinopower


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