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SM1600DSCSのメーカーはSinopowerです、この部品の機能は「Dual N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | SM1600DSCS |
| |
部品説明 | Dual N-Channel Enhancement Mode MOSFET | ||
メーカ | Sinopower | ||
ロゴ | |||
このページの下部にプレビューとSM1600DSCSダウンロード(pdfファイル)リンクがあります。 Total 11 pages
SM1600DSCS
®
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 30V/0.31A,
RDS(ON)= 0.8W(max.) @ VGS=10V
RDS(ON)= 1.1W(max.) @ VGS=4.5V
RDS(ON)= 2.1W(max.) @ VGS=2.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· ESD Protection
Applications
· High Speed and Analog Switching Applications
· Low voltage drive (2.5V drive)
S2
G2
D1
D2
G1
S1
Top View of SOT-363
(6)D1
(3)D2
(2) (5)
G1 G2
(1)S1
(4)S2
N-Channel MOSFET
Ordering and Marking Information
SM1600DS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
CS : SOT-363
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM1600DS CS : M00X
X - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - May, 2014
1
www.sinopowersemi.com
1 Page SM1600DSCS
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) b Drain-Source On-state Resistance
Gfs Forward Transconductance
VGS=0V, IDS =250mA
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250mA
VGS=±20V, VDS=0V
VGS=10V, IDS=0.4A
VGS=4.5V, IDS=0.3A
VGS=4V, IDS =0.3A
VGS=2.5V, IDS=0.2A
VDS=3 , ID=10mA
30
-
-
0.7
-
-
-
-
-
-
Diode Characteristics
VSD b Diode Forward Voltage
Dynamic Characteristics c
ISD=0.4A, VGS=0V
-
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=15V,
Frequency=1.0MHz
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics c
VDD=10V, RL=10W,
IDS=1A, VGEN=10V,
RG=6W
Qg Total Gate Charge
Qg Total Gate Charge
VDS=15V, VGS=10V,
IDS=1A
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=15V, VGS=4.5V,
IDS=1A
Qgth Threshold Gate Charge
Note b:Pulse test; pulse width£300ms, duty cycle£2%.
Note c:Guaranteed by design, not subject to production testing.
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
1.1
±2
0.5
0.8
0.9
1.4
0.9
0.85
23
5
2
1.4
11.8
8
2
1.6
0.7
0.54
0.03
0.02
Max.
-
1
30
1.5
±9
0.8
1.1
-
2.1
-
1.1
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
mA
V
mA
W
S
V
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - May, 2014
3
www.sinopowersemi.com
3Pages SM1600DSCS
Typical Operating Characteristics (Cont.)
®
Drain-Source On Resistance
1.8
V = 10V
GS
1.6 IDS = 0.4A
1.4
1.2
1.0
0.8
0.6
0.4
R @T =25oC:
ON j
0.5W
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Source-Drain Diode Forward
1
0.5 Tj=150oC
T =25oC
j
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source - Drain Voltage (V)
Capacitance
32
Frequency=1MHz
28
24 Ciss
20
16
12
8
4 Crss
Coss
0
0 5 10 15 20 25 30
VDS - Drain - Source Voltage (V)
Gate Charge
10
9
VDS=15V
IDS=1A
8
7
6
5
4
3
2
1
00.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
QG - Gate Charge (nC)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - May, 2014
6
www.sinopowersemi.com
6 Page | |||
ページ | 合計 : 11 ページ | ||
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PDF ダウンロード | [ SM1600DSCS データシート.PDF ] |
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部品番号 | 部品説明 | メーカ |
SM1600DSCS | Dual N-Channel Enhancement Mode MOSFET | Sinopower |