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PDF SM7509NSF Data sheet ( Hoja de datos )

Número de pieza SM7509NSF
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Sinopower 
Logotipo Sinopower Logotipo



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No Preview Available ! SM7509NSF Hoja de datos, Descripción, Manual

SM7509NSF
®
N-Channel Enhancement Mode MOSFET
Features
· 75V/100A,
RDS(ON)= 7.2mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
Applications
· Power Management for Inverter Systems.
.
Pin Description
GDS
Top View of TO-220
D
G
S
N-Channel MOSFET
Ordering and Marking Information
SM7509NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM7509NS F : SM7509N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
1
www.sinopowersemi.com

1 page




SM7509NSF pdf
SM7509NSF
Typical Operating Characteristics (Cont.)
®
Output Characteristics
180
VGS=6,7,8,9,10V
150
5.5V
120
90 5V
60
30 4.5V
0 4V
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
12
10
8
VGS=10V
6
4
2
0
0 40 80 120 160 200
ID- Drain Current (A)
Gate-Source On Resistance
30
IDS=40A
25
20
15
10
5
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.2 - June, 2014
5
www.sinopowersemi.com

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