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PDF SM1A11NSF Data sheet ( Hoja de datos )
| Número de pieza | SM1A11NSF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM1A11NSF
Features
· 100V/24A,
RDS(ON)= 45mW (Max.) @ VGS=10V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
GDS
Top View of TO-220
D
Applications
· High Speed Switching.
· High Voltage Synchronous Rectification for
Industrial Application.
· Fully Avalanche Rated.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM1A11NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
F : TO-220
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TU : Tube (50ea/tube)
Assembly Material
G : Halogen and Lead Free Device
SM1A11NS F : SM1A11N
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2013
1
www.sinopowersemi.com
1 page  
SM1A11NSF
®
Typical Operating Characteristics (Cont.)
Output Characteristics
50
VGS=6,7,8,9,10V
40 5V
30
20
4.5V
10
4V
0
0123456
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
90
75
60
45 VGS=10V
30
15
0
0 8 16 24 32 40
ID- Drain Current (A)
Gate-Source On Resistance
140
IDS=12A
120
100
80
60
40
20
0
3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.1 - December, 2013
5
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5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SM1A11NSF.PDF ] | |
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