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PDF SM2302NSA Data sheet ( 特性 )

部品番号 SM2302NSA
部品説明 N-Channel Enhancement Mode MOSFET
メーカ Sinopower
ロゴ Sinopower ロゴ 

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SM2302NSA Datasheet, SM2302NSA PDF,ピン配置, 機能
SM2302NSA
Features
· 20V/6A,
RDS(ON)= 26mW(max.) @ VGS=4.5V
RDS(ON)= 37mW(max.) @ VGS=2.5V
· ESD Protected
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
®
N-Channel Enhancement Mode MOSFET
Pin Description
D
S
G
Top View of SOT-23-3
D
Applications
G
· Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
Ordering and Marking Information
S
N-Channel MOSFET
SM2302NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
A : SOT-23-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (3000ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM2302NS A : A02XX
XX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Greento mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
1
www.sinopowersemi.com

1 Page





SM2302NSA pdf, ピン配列
SM2302NSA
®
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Dynamic Characteristics b
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics b
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=10V,
Frequenc y=1.0MHz
VDD=10V, RL=10W,
IDS=1A, VGEN=4.5V,
RG=6W
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=10V, VGS=4.5V,
IDS=4A
Note aPulse test ; pulse width £ 300 ms, duty cycle £ 2%.
Note bGuaranteed by design, not subject to production testing.
SM2302NSA
Min. Typ. Max.
-4-
- 600 800
- 135 180
- 125 175
- 5 10
- 9 17
- 25 46
- 5 10
- 12 17
- 1.4 -
- 4.4 -
Unit
W
pF
ns
nC
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
3
www.sinopowersemi.com


3Pages


SM2302NSA 電子部品, 半導体
SM2302NSA
Typical Operating Characteristics (Cont.)
®
Drain-Source On Resistance
1.8
VGS =4.5V
1.6
I =6A
DS
1.4
1.2
1.0
0.8
0.6
0.4 RON@Tj=25oC: 22mW
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
1400
1200
Capacitance
Frequency=1MHz
1000
800
600 Ciss
400
200 Crss
Coss
0
0 4 8 12 16 20
VDS - Drain - Source Voltage (V)
Source-Drain Diode Forward
20
10
T =150oC
j
1 Tj=25oC
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source - Drain Voltage (V)
Gate Charge
10
9
VDS =10V
IDS =6A
8
7
6
5
4
3
2
1
0
048
12 16 20 24
QG - Gate Charge (nC)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.3 - April, 2014
6
www.sinopowersemi.com

6 Page



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