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PDF SM4391NSKP Data sheet ( Hoja de datos )
| Número de pieza | SM4391NSKP | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Sinopower | |
| Logotipo |  |
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SM4391NSKP
Features
· 30V/100A,
RDS(ON)= 1.25mW (max.) @ VGS=10V
RDS(ON)= 1.7mW (max.) @ VGS=4.5V
· Reliable and Rugged
· Lead Free and Green Devices Available
(RoHS Compliant)
· 100% UIS Tested
®
N-Channel Enhancement Mode MOSFET
Pin Description
DDDD
S S SG
DFN5x6-8
(5,6,7,8)
DD DD
Pin 1
Applications
· OR-ing
· Synchronous Rectifier for Server
· Battery Charger and Power Circuits
(4) G
SSS
( 1, 2, 3 )
N-Channel MOSFET
Ordering and Marking Information
SM4391NS
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
KP : DFN5x6-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel (2500ea/reel)
Assembly Material
G : Halogen and Lead Free Device
SM4391NS KP :
SM4391
XXXXX
XXXXX - Lot Code
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - February, 2014
1
www.sinopowersemi.com
1 page  
SM4391NSKP
Typical Operating Characteristics (Cont.)
®
Output Characteristics
150
V =4,5,6,7,8,9,10V
GS
125
100 3V
75
50
2.8V
25
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
1.8
1.6
1.4 VGS=4.5V
1.2
1.0 VGS=10V
0.8
0.6
0
25 50 75 100 125 150
ID- Drain Current (A)
Gate-Source On Resistance
6
IDS=40A
5
4
3
2
1
0
2 3 4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS =250mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - February, 2014
5
www.sinopowersemi.com
5 Page 
SM4391NSKP
Taping Direction Information
DFN5x6-8
USER DIRECTION OF FEED
®
Classification Profile
Copyright ã Sinopower Semiconductor, Inc.
Rev. A.4 - February, 2014
11
www.sinopowersemi.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SM4391NSKP.PDF ] | |
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