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Datasheet D12PS50 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | D12PS50 | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Production specification
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
D12PS20--D12PS100
FEATURES
z Super long operating life z Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
MECHANICAL DATA
Pb
Lead-free
z Case: TO-277B molded plastic body
z Mounting position: ANY
M |  Galaxy Microelectronics | rectifier |
D12 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | D12000W | Standard Recovery Diode SEMICONDUCTOR
RRooHHSS
SEMICONDUCTOR
Fig.1 Maximuam forward voltage drop characteristics
D12000W Series RRooHHSS
Fig.2 Surge forward current vs pulse length
Fig.3 Forward power loss vs. Average forward current sine waveform
Fig.4 Forward power loss vs. Average forward current,square waveform
F  nELL diode | | |
| 2 | D1201 | METAL GATE RF SILICON FET TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW  Seme LAB gate | | |
| 3 | D1201UK | METAL GATE RF SILICON FET TetraFET
D1201UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 4 | D1202 | METAL GATE RF SILICON FET TetraFET
D1202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 5 | D1202UK | METAL GATE RF SILICON FET TetraFET
D1202UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C N (typ) B 3 D (2 pls)
2 1 A
F (2 pls) H J
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
M
I
E
K
G
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Seme LAB gate | | |
| 6 | D1203UK | METAL GATE RF SILICON FET TetraFET
D1203UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2
D E
4 M
3
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
F
G
H
K
I
J
• SUITABLE FOR BROAD BAND APPLICATIONS
DRAIN GATE
DM
PIN 1 PIN Seme LAB gate | | |
| 7 | D1204 | METAL GATE RF SILICON FET TetraFET
D1204UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 30W – 12.5V – 500MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
5
4
H I
F
M
K
J
Seme LAB gate | |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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