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MBRA320T3G の電気的特性と機能

MBRA320T3GのメーカーはON Semiconductorです、この部品の機能は「Surface Mount Schottky Power Rectifier」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBRA320T3G
部品説明 Surface Mount Schottky Power Rectifier
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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MBRA320T3G Datasheet, MBRA320T3G PDF,ピン配置, 機能
MBRA320T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped in 12 mm tape, 5000 units per 13 inch reel
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
VRRM 20 V
VRWM
VR
IO 3.0 A
Non−Repetitive Peak Surge Current
IFSM 80 A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Storage Temperature
Tstg −65 to +150 °C
Operating Junction Temperature
TJ −65 to +125 °C
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
20 VOLTS
1
Cathode
2
Anode
2
1
SMA
CASE 403D
MARKING DIAGRAM
A32
AYWWG
A32 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MBRA320T3G
NRVBA320T3G
SMA
(Pb−Free)
SMA
(Pb−Free)
5000/Tape & Reel
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 1
1
Publication Order Number:
MBRA320/D

1 Page





MBRA320T3G pdf, ピン配列
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
0
MBRA320T3G
TYPICAL CHARACTERISTICS
1.E−01
TJ = 100°C
1.E−02
1.E−03
1.E−04
TJ = 100°C
TJ = 25°C
TJ = 25°C
1.E−05
5 10 15
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
1.E−06
20 0
5 10 15
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
20
6
5 dc
RqJL = 15°C/W
4
SQUARE WAVE
3
2
1
0
50 60 70 80 90 100 110 120 130
TL, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
6
5
SQUARE
4 WAVE
3
2 dc
1
0
01 23 4
IO, AVERAGE FORWARD CURRENT (A)
Figure 6. Forward Power Dissipation
5
700
TJ = 25°C
600
500
400
300
200
100
0
0 4 8 12 16 20 24 28 32 36 40
VR, REVERSE VOLTAGE (V)
Figure 7. Typical Capacitance
http://onsemi.com
3


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部品番号部品説明メーカ
MBRA320T3G

Surface Mount Schottky Power Rectifier

ON Semiconductor
ON Semiconductor


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