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PDF ISL70444SEH Data sheet ( Hoja de datos )
| Número de pieza | ISL70444SEH | |
| Descripción | Low-power Operational Amplifiers | |
| Fabricantes | Intersil | |
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DATASHEET
19MHz Radiation Hardened 40V Quad Rail-to-rail
Input-output, Low-power Operational Amplifiers
ISL70444SEH
The ISL70444SEH features four low-power amplifiers
optimized to provide maximum dynamic range. These op
amps feature a unique combination of rail-to-rail operation on
the input and output as well as a slew enhanced front-end that
provides ultra fast slew rates positively proportional to a given
step size; thereby increasing accuracy under transient
conditions, whether it’s periodic or momentary. They also offer
low power, low offset voltage and low temperature drift,
making it ideal for applications requiring both high DC
accuracy and AC performance. With <5µs recovery for Single
Event Transients (SET) (LETTH = 86.4MeV•cm2/mg), the
number of filtering components needed is drastically reduced.
The ISL70444SEH is also immune to single event latch-up as it
is fabricated in Intersil’s proprietary PR40 Silicon On Insulator
(SOI) process.
They are designed to operate over a single supply range of 2.7V
to 40V or a split supply voltage range of ±1.35V to ±20V.
Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls and process controls.
The ISL70444SEH is available in a 14 Ld Hermetic Ceramic
Flatpack and die forms that operate across the temperature
range of -55°C to +125°C.
Related Literature
• AN1824, ISL70444SEH Evaluation Board User’s Guide
• AN1838, Single Event Effects Testing of the ISL70444SEH,
Quad 40V Radiation Hard Precisi
• AN1870, Total Dose Testing of the ISL70444SEH Radiation
Hardened Quad Operational Amplifier
• AN 1867, ISL70444SEH SPICE Macro-Model
• ISL70444SEH SMD 5962-13214
Features
• Electrically screened to DLA SMD# 5962-13214
• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SEE (LETTH = 86.4MeV•cm2/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . . . . . . 2.7V to 40V Max
• Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 300µV
• Low current consumption (per amplifier) . . . . . . . 1.1mA, Typ
• No phase reversal with input overdrive
• Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
- SEB LETTH (VS = ±21V). . . . . . . . . . . . . . 86.4MeV•cm2/mg
- SEL Immune (SOI Process)
* Product capability established by initial characterization.
Applications
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
RF
+
RSENSE
RIN-
10kΩ
RIN+
10kΩ
LOAD
100kΩ
-IN -
+2.7V
to 40V
V+ VOUT
ISL70444
+IN +
V-
VOUT =
RREF+
10 (ILOAD * RSENSE)
100kΩ
VREF
30
20
10
0
-10
-20
-30 0
VS ±18V
GROUNDED
BIASED
50 100 150 200 250 300
krad (Si)
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
FIGURE 2. VOS SHIFT vs HIGH DOSE RATE RADIATION
June 5, 2015
FN8411.3
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013-2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
1 page  
ISL70444SEH
Absolute Maximum Ratings
Maximum Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Supply Voltage (Note 5). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42V
Maximum Differential Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Differential Input Voltage . . . . . . . . 42V or V- - 0.5V to V+ + 0.5V
Min/Max Input Voltage . . . . . . . . . . . . . . . . . . . . 42V or V- - 0.5V to V+ + 0.5V
Max/Min Input Current for Input Voltage >V+ or <V- . . . . . . . . . . . . . . . . . ±20mA
ESD Tolerance
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per CDM-22CI0ID) . . . . . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
14 Ld Flatpack Package (Notes 3, 4). . . . .
35
9
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Recommended Operating Conditions
Ambient Operating Temperature Range . . . . . . . . . . . . . .-55°C to +125°C
Maximum Operating Junction Temperature . . . . . . . . . . . . . . . . . .+150°C
Single Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . 3V ±10% to 36V ±10%
Split Rail Supply Voltage . . . . . . . . . . . . . . . . . . ±1.5V ±10% to ±18V ±10%
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
4. For JC, the “case temp” location is the center of the package underside.
5. Tested in a heavy ion environment at LET = 86.4MeV•cm2/mg at +125°C (TC) for SEB. Refer to Single Event Effects Test Report for more information.
Electrical Specifications VS = ±18V, VCM = VO = 0V, RL = Open, TA = +25°C, unless otherwise noted. Boldface limits apply
across the operating temperature range, -55°C to +125°C.
PARAMETER
DESCRIPTION
TEST CONDITIONS
MIN MAX
(Note 6) TYP (Note 6)
UNIT
VOS
TCVOS
VOS
IB
IOS
VCMIR
CMRR
PSRR
Offset Voltage
VCM = 0V
VCM = V+ to V-
Offset Voltage Temperature
Coefficient
VCM = V+ - 2V to V- + 2V
Input Offset Channel-to-channel Match VCM = V+
VCM = V-
Input Bias Current
VCM = 0V
VCM = V+
VCM = V-
VCM = V+ - 0.5V
VCM = V- + 0.5V
Input Offset Current
VCM = V+ to V-
Common Mode Input Voltage Range
Common Mode Rejection Ratio
Power Supply Rejection Ratio
VCM = V- to V+
VCM = V- to V+
VCM = V+ - 0.5V to V- + 0.5V
VCM = V+ - 0.5V to V- + 0.5V
V- = -18V; V+ = 0.5V to 18V
V+ = 18V; V- = -0.5V to -18V
20 300
µV
80 400
µV
0.5 µV/°C
77 800
117 800
189 370
200 370
262 650
200 370
257 650
-17 0
17
V- V+
112
70
111
80
128
88
µV
µV
nA
nA
nA
nA
nA
nA
V
dB
dB
dB
dB
dB
dB
AVOL
Open-loop Gain
RL = 10kΩ to ground
125
96
dB
dB
VOH Output Voltage High (VOUT to V+) RL = No load
78 160
RL = 10kΩ
118 175
VOL Output Voltage Low (VOUT to V-)
RL = No load
73 160
RL = 10kΩ
110 175
ISRC Output Short-circuit Current
Sourcing; VIN = 0V, VOUT = -18V
10
mV
mV
mV
mV
mA
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5
FN8411.3
June 5, 2015
5 Page 
ISL70444SEH
Typical Performance Curves Unless otherwise specified, VS ± 18V, VCM = 0, VO = 0V, TA = +25°C. (Continued)
2.5 3.5
2.0
1.5
IOS
1.0
0.5
3.0
2.5
2.0
1.5 IOS
1.0
0.5
0
-100
-50
0
50 100
TEMPERATURE (°C)
FIGURE 9. IOS vs TEMPERATURE (VS = ±2.5V)
150
0
-100
-50 0 50 100
TEMPERATURE (°C)
FIGURE 10. IOS vs TEMPERATURE (VS = ±1.5V)
150
70
60
50
40
30 VOS
20
10
-0100
-50 0 50
TEMPERATURE (°C)
100
FIGURE 11. VOS vs TEMPERATURE (VS = ±18V)
150
70
60
50
40
30 VOS
20
10
0
-100
-50 0
50
TEMPERATURE (°C)
100
FIGURE 12. VOS vs TEMPERATURE (VS = ±2.5V)
150
50
40
30
VOS
20
10
0-100
-50
0
50 100
TEMPERATURE (°C)
FIGURE 13. VOS vs TEMPERATURE (VS = ±1.5V)
150
135
130 ±18V
125
120
115 ±1.5V
110
±2.5V
105
100
-75
-25 25 75
TEMPERATURE (°C)
125
FIGURE 14. AVOL vs TEMPERATURE vs SUPPLY VOLTAGE
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FN8411.3
June 5, 2015
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| PDF Descargar | [ Datasheet ISL70444SEH.PDF ] | |
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