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HS-303AEH の電気的特性と機能

HS-303AEHのメーカーはIntersilです、この部品の機能は「Radiation Hardened CMOS Dual SPDT Analog Switch」です。


製品の詳細 ( Datasheet PDF )

部品番号 HS-303AEH
部品説明 Radiation Hardened CMOS Dual SPDT Analog Switch
メーカ Intersil
ロゴ Intersil ロゴ 




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HS-303AEH Datasheet, HS-303AEH PDF,ピン配置, 機能
DATASHEET
Radiation Hardened CMOS Dual SPDT Analog Switch
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
The HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH analog
switches are monolithic devices fabricated using Intersil’s
dielectrically isolated Radiation Hardened Silicon Gate (RSG)
process technology to insure latch-up free operation. They are
pinout compatible and functionally equivalent to the
HS-303RH, but offer improved 300kRAD(Si) total dose
capability. These switches offers low-resistance switching
performance for analog voltages up to the supply rails.
ON-resistance is low and stays reasonably constant over the
full range of operating voltage and current. ON-resistance also
stays reasonably constant when exposed to radiation.
Break-before-make switching is controlled by 5V digital inputs.
The HS-303ARH, HS-303AEH should be operated with nominal
±15V supplies, while the HS-303BRH, HS-303BEH should be
operated with nominal ±12V supplies.
Specifications
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
number listed in the following must be used when ordering.
Features
• QML, per MIL-PRF-38535
• Radiation performance
- Total dose: 3x105 rad(Si)
- SEE: For LET = 60MeV-mg/cm2 at 60° incident angle,
<150pC charge transferred to the output of an off switch
• No latch-up, dielectrically isolated device islands
• Pinout and functionally compatible with Intersil HS-303RH
and HI-303 series analog switches
• Analog signal range equal to the supply voltage range
• Low leakage . . . . . . . . . . . . . . . . . . . . . 100nA (max, post-rad)
• Low rON . . . . . . . . . . . . . . . . . . . . . . . . . . . 70Ω (max, post-rad)
• Low standby supply current . . . . . . . . . . . . . +150µA/-100µA
(max, post-rad)
Detailed Electrical Specifications for the HS-303ARH,
HS-303AEH, HS-303BRH, HS-303BEH are contained in
SMD 5962-95813.
Functional Diagram
IN N P
D
LOGIC
0
1
TRUTH TABLE
SW1 AND SW2
OFF
ON
SW3 AND SW4
ON
OFF
Pin Configurations
HS1-303ARH, HS-303BRH
(SBDIP), CDIP2-T14
TOP VIEW
NC 1
S3 2
D3 3
D1 4
S1 5
IN1 6
GND 7
14 V+
13 S4
12 D4
11 D2
10 S2
9 IN2
8 V-
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
(FLATPACK) CDFP3-F14
TOP VIEW
NC
S3
D3
D1
S1
IN1
GND
1
2
3
4
5
6
7
14 V+
13
S4
12 D4
11 D2
10 S2
9
IN2
8
V-
March 4, 2015
FN6411.3
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Copyright Intersil Americas Inc. 2006, 2008, 2012, 2015. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.

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HS-303AEH pdf, ピン配列
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
Die Characteristics
DIE DIMENSIONS:
2690µm x 5200µm (106mils x 205mils)
Thickness: 483µm ± 25.4µm (19mils ± 1mil)
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ ± 1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ ± 2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
332
Metallization Mask Layout
HS-303ARH, HS-303AEH, HS-303BRH, HS-303BEH
V-
V+
GND
For additional products, see www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
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FN6411.3
March 4, 2015


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部品番号部品説明メーカ
HS-303AEH

Radiation Hardened CMOS Dual SPDT Analog Switch

Intersil
Intersil


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