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IS-1009EH の電気的特性と機能

IS-1009EHのメーカーはIntersilです、この部品の機能は「Radiation Hardened 2.5V Reference」です。


製品の詳細 ( Datasheet PDF )

部品番号 IS-1009EH
部品説明 Radiation Hardened 2.5V Reference
メーカ Intersil
ロゴ Intersil ロゴ 




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IS-1009EH Datasheet, IS-1009EH PDF,ピン配置, 機能
DATASHEET
Radiation Hardened 2.5V Reference
IS-1009RH, IS-1009EH
The Star*Power™ Radiation Hardened IS-1009RH, IS-1009EH
are a 2.5V shunt regulator diode is designed to provide a stable
2.5V reference over a wide current range.
These devices are designed to maintain stability over the full
military temperature range and over time. The 0.2% reference
tolerance is achieved by on-chip trimming.
An adjustment terminal is provided to allow for the calibration
of system errors. The use of this terminal to adjust the
reference voltage does not effect the temperature coefficient.
Constructed with the Intersil dielectrically isolated EBHF
process, these devices are immune to single event latch-up
and have been specifically designed to provide highly reliable
performance in harsh radiation environments.
The IS-1009EH replaces the obsoleted IS-1009RH.
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-00523.
Features
• Electrically screened to SMD #5962-00523
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)
- Latch-up immune. . . . . . . . . . . . . . . . dielectrically isolated
• Reverse breakdown voltage (VZ) . . . . . . . . . . . . . . . . . . . . 2.5V
• Change in VZ vs current (400µA to 10mA) . . . . . . . . . . . . 6mV
• Change in VZ vs temperature (-55°C to +125°C) . . . . .15mV
• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA
• Device is tested with 10µF shunt capacitance connected
from V+ to V-, which provides optimum stability
• Interchangeable with 1009 and 136 industry types
Applications
• Power supply monitoring
• Reference for 5V systems
• A/D and D/A reference
Pin Configurations
IS2-1009RH, IS2-1009EH
(TO-206AB CAN)
BOTTOM VIEW
V+
2
ADJ 1
3 V-
ISYE-1009RH, ISYE-1009EH
(SMD.5)
BOTTOM VIEW
V- 3
2 ADJ
1 V+
November 19, 2015
FN4780.7
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2000, 2006, 2011, 2013, 2015. All Rights Reserved
Intersil (and design) and Star*Power are trademarks owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.

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IS-1009EH pdf, ピン配列
IS-1009RH, IS-1009EH
Die Characteristics
DIE DIMENSIONS
1270µm x 1778µm (50 mils x 70 mils)
Thickness: 356µm ±25.4µm (14 mils ±1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si3N4)
Nitride Thickness: 4.0kÅ ±1.0kÅ
Top Metallization
Type: AlSiCu
Thickness: 16.0kű2kÅ
Substrate
EBHF, Dielectric Isolation
Metallization Mask Layout
Backside Finish
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential
Unbiased (DI)
ADDITIONAL INFORMATION
Worst Case Current Density
<1.0 x 105 A/cm2
Transistor Count
26
IS-1009RH, IS-1009EH
ADJ
V+
V-
Submit Document Feedback
3
FN4780.7
November 19, 2015


3Pages





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部品番号部品説明メーカ
IS-1009EH

Radiation Hardened 2.5V Reference

Intersil
Intersil


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