ISL75052SEH Datasheet PDF - Intersil
| Part Number | ISL75052SEH | |
| Description | High Voltage LDO | |
| Manufacturers | Intersil | |
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DATASHEET
1.5A, Radiation Hardened, Positive, High Voltage LDO
ISL75052SEH
The ISL75052SEH is a radiation hardened, single output LDO
specified for an output current of 1.5A. The device operates
from an input voltage range of 4.0V to 13.2V and provides for
output voltages of 0.6V to 12.7V. The output is adjustable
based on a resistor divider setting. Dropout voltages as low as
75mV (at 0.5A) typical can be realized using the device. This
allows the user to improve the system efficiency by lowering
VIN to nearly VOUT.
The ENABLE feature allows the part to be placed into a low
shutdown current mode of 165µA (typical). When enabled, the
device operates with a low ground current of 11mA (typical),
which provides for operation with low quiescent power
consumption.
The device has superior transient response and is designed
keeping single event effects in mind. This results in reduction
of the magnitude of SET seen on the output. There is no need
for additional protection diodes and filters.
A COMP pin is provided to enable the use of external
compensation. This is achieved by connecting a resistor and
capacitor from COMP to ground. The device is stable with
tantalum capacitors as low as 47µF (KEMET T525 series) and
provides excellent regulation all the way from no load to full
load. The programmable soft-start allows one to program the
inrush current by means of the decoupling capacitor used on
the BYP pin. The OCP pin allows the short-circuit output current
limit threshold to be programmed by means of a resistor from
OCP pin to GND. The OCP setting range is from a 0.16A
minimum to 3.2A maximum. The resistor sets the constant
current threshold for the output under fault conditions. The
thermal shutdown disables the output if the device
temperature exceeds the specified value. It will subsequently
enter an ON/OFF cycle until the fault is removed.
Applications
• LDO regulator for space power systems
• DSP, FPGA and µP core power supplies
• Post regulation of SMPS and down-hole drilling
Features
• DLA SMD 5962-13220
• Input supply range 4.0V to 13.2V
• Output current up to 1.5A at TJ = +150°C
• Best in class accuracy ±1.5%
- Over line, load and temperature
• Ultra low dropout:
- 75mV dropout (typical) at 0.5A
- 225mV dropout (typical) at 1.5A
• Noise of 100µVRMS (typical) between 300Hz to 300kHz
• SET mitigation with no added filtering/diodes
• Shutdown current of 165µA (typical)
• Externally adjustable output voltage
• PSRR 65dB (typical) at 1kHz
• ENable and PGood feature
• Programmable soft-start/inrush current limiting
• Adjustable overcurrent protection
• Over-temperature shutdown
• Stable with 47µF minimum tantalum capacitor
• 16 Ld flatpack package
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . 86MeV•cm2/mg
*Product capability established by initial characterization. The
"EH" version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Related Literature
• For a full list of related documents please visit our web page
- ISL75052SEH product page
EN
VIN
200µF 0.1µF
ISL75052SEH
3, 4, 5 VIN VOUT 1, 2
16 BYP
ADJ 15
8 OCP
EN 14
9 VCCX GND 13
10 PG COMP 12
0.1µF 0.1µF 300
22k
VIN
22k
1nF
VOUT
2.5V
15.8k
0.1µF 200µF
2.2k
2.2n
4.87k
PG
FIGURE 1. TYPICAL APPLICATION
0.30
0.25
0.20
0.15
0.10
0.05
0.000
+150°C
+125°C
+25°C
0.5 1.0 1.5
ILOAD (A)
FIGURE 2. DROPOUT vs IOUT
2.0
October 25, 2016
FN8456.6
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013-2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
|
| |
 
ISL75052SEH
Absolute Maximum Ratings
VIN Relative to GND Without Ion Beam (Note 3) . . . . . . . . . -0.3 to +16.0V
VIN Relative to GND Under Ion Beam (Note 3) . . . . . . . . . . . -0.3 to +14.7V
VOUT Relative to GND (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +14.7V
PG, EN, OCP/ADJ, COMP, REFIN,
REFOUT Relative to GND (Note 3). . . . . . . . . . . . . . . . . . . -0.3 to +6.5VDC
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . 750V
Recommended Operating Conditions (Note 4)
Ambient Temperature Range (TA) . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Junction Temperature (TJ) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
VIN Relative to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V to 13.2V
VOUT Range (Note 9) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.6V to 12.7V
PG, EN, OCP/ADJ Relative to GND . . . . . . . . . . . . . . . . . . . . . . . .0V to +5.5V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
16 Ld CDFP Package (Notes 6, 7) . . . . . . .
26
4.5
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Radiation Information
Maximum Total Dose
High Dose (Dose Rate = 50-300radSi/s). . . . . . . . . . . . . . . 100krads (Si)
Low Dose (Dose Rate = 10mradSi/s) (Note 5) . . . . . . . . . . 100krads (Si)
SET (VOUT within ±5% During Events) . . . . . . . . . . . . . . . 86MeV•cm2/mg
SEL/B (No Latch-Up/Burnout). . . . . . . . . . . . . . . . . . . . . . 86MeV•cm2/mg
The output capacitance used for SEE testing is 2x100µF for CIN and COUT,
100nF for BYPASS.
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. Extended operation at these conditions may compromise reliability. Exceeding these limits will result in damage. Recommended operating conditions
define limits where specifications are established.
4. Refer to “Bottom Metal Mounting Guidelines” on page 15.
5. Product capability established by initial characterization. The “EH” version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
6. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
TechBrief TB379.
7. For JC, the “case temp” location is the center of the exposed metal pad on the package underside.
8. Electromigration specification defined as lifetime average junction temperature of +150°C where maximum rated DC current = lifetime average
current.
9. SET performance of ±5% applies to VOUT ≥ 2.5V. For VOUT <2.5V SEE testing will need to be performed to ensure system SET goals are met.
Electrical Specifications Unless otherwise noted, VIN = VOUT + 0.5V, VOUT = 4.0V, CIN = COUT = 2x100µF 60mΩ, KEMET type
T541X107N025AH or equivalent, TJ = +25°C, IL = 0A. Applications must follow thermal guidelines of the package to determine worst case junction
temperature. Please refer to “Applications Information” on page 15 and Tech Brief TB379. Boldface limits apply across the operating temperature range,
-55°C to +125°C. Pulse load techniques used by ATE to ensure TJ = TA defines established limits.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 10) TYP (Note 10) UNIT
DC CHARACTERISTICS
DC Output Voltage Accuracy
VOUT
VOUT Resistor adjust to: 2.5V and 5.0V
VOUT = 2.5V, 4.0V < VIN < 5.0V; 0A < ILOAD < 1.5A,
TJ = -55°C to +125°C
VOUT = 2.5V, 4.0V < VIN < 5.0V; 0A < ILOAD < 1.5A,
TJ = +25°C, post radiation
VOUT = 5.0V, 5.5V < VIN < 6.9V; 0A < ILOAD < 1.5A,
TJ = -55°C to +125°C
VOUT = 5.0V, 5.5V < VIN < 6.9V, 0A < ILOAD < 1.5A,
TJ = +25°C, post radiation
VOUT Resistor adjust to: 10.0V
VOUT = 10.0V, 10.5V < VIN < 13.2V, ILOAD = 0A,
TJ = -55°C to +125°C
VOUT = 10.0V, 10.5V < VIN < 13.2V, ILOAD = 0A,
TJ = +25°C, post radiation
VOUT = 10.0V, VIN = 10.5V, ILOAD = 1.5A,
VIN = 13.2V, ILOAD = 1.0A, TJ = -55°C to +125°C
VOUT = 10.0V, VIN = 10.5V; ILOAD = 1.5A, VIN = 13.2V,
ILOAD = 1.0A, TJ = +25°C, post radiation
-1.5 0.2
-2.0 0.2
-1.5 0.2
-2.0 0.2
-1.5 0.2
-2.0 0.2
-1.5 0.2
-2.0 0.2
1.5
2.0
1.5
2.0
1.5
2.0
1.5
2.0
%
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%
%
%
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October 25, 2016
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