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PDF ISL75051SRH Data sheet ( Hoja de datos )
| Número de pieza | ISL75051SRH | |
| Descripción | Ultra-Low Dropout Regulator | |
| Fabricantes | Intersil | |
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DATASHEET
3A, Radiation Hardened, Positive, Ultra-Low Dropout
Regulator
ISL75051SEH, ISL75051SRH
The ISL75051SEH, ISL75051SRH are radiation hardened
low-voltage, high-current, single-output LDOs specified for up
to 3.0A of continuous output current. These devices operate
over an input voltage range of 2.2V to 6.0V and are capable of
providing output voltages of 0.8V to 5.0V adjustable based on
resistor divider setting. Dropout voltages as low as 65mV can
be realized using the device.
The OCP pin allows the short-circuit output current limit
threshold to be programmed by means of a resistor from the
OCP pin to GND. The OCP setting range is from 0.5A minimum
to 8.5A maximum. The resistor sets the constant current
threshold for the output under fault conditions. The thermal
shutdown disables the output if the device temperature
exceeds the specified value. It subsequently enters an ON/OFF
cycle until the fault is removed. The ENABLE feature allows the
part to be placed into a low current shutdown mode that
typically draws about 1µA.
These devices are optimized for fast transient response and
single event effects. This reduces the magnitude of SET seen
on the output. Additional protection diodes and filters are not
needed. These devices are stable with tantalum capacitors as
low as 47µF and provide excellent regulation all the way from
no load to full load. Programmable soft-start allows the user to
program the inrush current by means of the decoupling
capacitor value used on the BYP pin.
Applications
• LDO regulator for space application
• DSP, FPGA and µP core power supplies
• Post-regulation of switched mode power supplies
• Down-hole drilling
Features
• DLA SMD 5962-11212
• Output current up to 3.0A at TJ = +150°C
• Output accuracy ±1.5% over MIL temperature range
• Ultra low dropout:
- 65mV (typical) dropout at 1.0A
- 225mV (typical) dropout at 3.0A
• SET mitigation with no added filtering/diodes
• Input supply range: 2.2V to 6.0V
• Fast load transient response
• Shutdown current of 1µA (typical)
• Output adjustable using external resistors
• PSRR 66dB (typical) at 1kHz
• Enable and PGood feature
• Programmable soft-start/inrush current limiting
• Over-temperature shutdown and programmable OCP limits
• Stable with 47µF min tantalum capacitor
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50 krad(Si) at low dose rate.
Related Literature
• For a full list of related documents please visit our website
- ISL75051SEH product page
- ISL75051SRH product page
EN
ROCP
VIN
220µF 0.1µF
EN BYP
OCP
VIN
ISL75051SEH
ADJ
VOUT
PG GND
R1
VIN
0.1µF
VOUT
2.67k
0.1µF 220µF
4.7nF
PG R2
100pF
FIGURE 1. TYPICAL APPLICATION
0.30
0.25
0.20
+150°C
+125°C
0.15
0.10
+25°C
0.05
0.00
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50
IOUT (A)
FIGURE 2. DROPOUT vs IOUT
September 23, 2016
FN8294.6
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2012, 2014, 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
1 page  
ISL75051SEH, ISL75051SRH
Absolute Maximum Ratings
VIN Relative to GND (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to + 6.7V
VOUT Relative to GND (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to + 6.7V
PG, EN, OCP/ADJ Relative to GND (Note 3). . . . . . . . . . . . -0.3 to + 6.7VDC
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
ESD Rating
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . .2.5kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . 250V
Charged Device Model (Tested per JESD22-C101D) . . . . . . . . . . . . . 1kV
Recommended Operating Conditions (Note 4)
Ambient Temperature Range (TA) . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Junction Temperature (TJ) (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C
VIN Relative to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2V to 6.0V
VOUT Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.8V to 5.0V
PG, EN, OCP/ADJ Relative to GND . . . . . . . . . . . . . . . . . . . . . . . 0V to +6.0V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
18 Ld CDFP Package (Notes 7, 8) . . . . . . .
28
4
18 Ld CDFP Package with Bottom
Metal and Solder Mount (Notes 7, 8). . .
24
3.3
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Radiation Information
Maximum Total Dose
Dose Rate = 50-300rad(Si)/s. . . . . . . . . . . . . . . . . . . . . . . . . 100krad (Si)
Dose Rate = 0.01rad(Si)/s (Note 5) . . . . . . . . . . . . . . . . . . . . 100krad (Si)
SEE Performance
SET (VOUT < ±5% During Events)
SEL/SEB (No Latch-Up/Burnout .
(Note
.....
6)
..
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.86MeV•cm2/mg
.86MeV•cm2/mg
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. Extended operation at these conditions may compromise reliability. Exceeding these limits will result in damage. Recommended operating conditions
define limits where specifications are guaranteed.
4. Refer to “Thermal Guidelines” on page 17.
5. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer-by-wafer basis to 50 krad(Si) at low dose
rate.
6. Specify EVAL test conditions for SET/SEB/SEL here.
7. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
8. For JC, the “case temp” location is the center of the package underside.
9. The device can work down to VOUT = 0.8V; however, the SET performance of < ±5% at LET = 86MeV•cm2/mg is established at VOUT = >1.5V only.
SET tests performed with 220µF 10V 25mΩ and 0.1µF CDR04 capacitor on the input and output.
Electrical Specifications Unless otherwise noted, all parameters are established over the following specified conditions: VIN = VOUT +
0.4V, VOUT = 1.8V, CIN = COUT = 220µF 25mΩ and 0.1µF X7R, TJ = +25°C, IL = 0A. Applications must follow thermal guidelines of the package to
determine worst-case junction temperature (see Note 13). Boldface limits apply across the operating temperature range, -55°C to +125°C. Pulse load
techniques used by ATE to ensure TJ = TA defines established limits.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN MAX
(Note 10) TYP (Note 10) UNIT
DC CHARACTERISTICS
DC Output Voltage Accuracy
VADJ Pin Voltage
BYP Pin
DC Input Line Regulation
VOUT
VADJ
VBYP
VOUT resistor adjust to 0.52V, 1.5V and 1.8V
2.2V < VIN < 3.6V; 0A < ILOAD < 3.0A
VOUT resistor adjust to 5.0V
VOUT + 0.4V < VIN < 6.0V; 0A < ILOAD < 3.0A
2.2V < VIN < 6.0V; ILOAD = 0A
2.2V < VIN < 6.0V; ILOAD = 0A
2.2V < VIN < 3.6V, VOUT = 1.5V, +25°C and -55°C
(Note 11)
-1.5
-1.5
514.8
0.2
0.2
520.0
520
1.13
1.5
1.5
525.2
3.50
%
%
mV
mV
mV
DC Input Line Regulation
DC Input Line Regulation
2.2V < VIN < 3.6V, VOUT = 1.5V, +125°C (Note 11)
2.2V < VIN < 3.6V, VOUT = 1.8V, +25°C and -55°C
(Note 11)
1.13
1.62
8.00
3.50
mV
mV
DC Input Line Regulation
DC Input Line Regulation
DC Output Load Regulation
2.2V < VIN < 3.6V, VOUT = 1.8V, +125°C (Note 11)
VOUT + 0.4V < VIN < 6.0V, VOUT = 5.0V (Note 11)
VOUT = 1.5V; 0A < ILOAD < 3.0A, VIN = VOUT + 0.4V
(Note 11)
-4.0
1.62
12.50
-0.8
10.50
20.00
-0.1
mV
mV
mV
Submit Document Feedback
5
FN8294.6
September 23, 2016
5 Page 
ISL75051SEH, ISL75051SRH
Post Radiation Characteristics for High Dose and Low Dose TA = +25°C, unless otherwise noted. This data is typical
test data post radiation exposure at a rate of 10mrad(Si)/s for low dose rate and 50-300rad(Si)/s for high dose rate. This data is intended to show typical
parameter shifts due to High Dose Rate (HDR) or Low Dose Rate (LDR) radiation. These are not limits nor are they guaranteed. Low dose rate data applies
only to ISL75051SEH.
1.525
1.520
1.515
1.510
1.505
1.500
1.495
1.490
1.485
1.480
1.475
0
SPEC LIMIT
LDR BIAS
HDR BIAS
LDR GROUND
HDR GROUND
SPEC LIMIT
50 100 150
TOTAL DOSE, krad(Si)
POST
ANNEAL
FIGURE 5. DC OUTPUT VOLTAGE, 1.5VOUT, 3.6VIN NO LOAD
1.525
1.520
1.515
1.510
1.505
1.500
1.495
1.490
1.485
1.480
1.475
0
SPEC LIMIT
LDR BIAS
HDR BIAS
LDR GROUND HDR GROUND
SPEC LIMIT
50 100 150
TOTAL DOSE, krad(Si)
POST
ANNEAL
FIGURE 6. DC OUTPUT VOLTAGE, 1.5VOUT, 3.6VIN, 3A LOAD
20
18 LDR BIAS
16
SPEC LIMIT
CONTROL
HDR BIAS
14 LDR GROUND
12
HDR GROUND
10
8 SPEC LIMIT
6
0 50 100 150 POST
TOTAL DOSE, krad(Si)
ANNEAL
FIGURE 7. GROUND PIN CURRENT, 5.0VOUT, 5.5VIN, NO LOAD
350
300
250 LDR BIAS
SPEC LIMIT
CONTROL
HDR GROUND
200
150 LDR GROUND
HDR BIAS
100
SPEC LIMIT
50
0
0 50 100 150 POST
TOTAL DOSE, krad(Si)
ANNEAL
FIGURE 8. DROPOUT VOLTAGE, 2.5VOUT, 3A LOAD CURRENT
8
7
LDR BIAS
6
SPEC LIMIT
HDR BIAS
CONTROL
5
LDR GROUND
HDR GROUND
SPEC LIMIT
4
0 50 100 150 POST
TOTAL DOSE, krad(Si)
ANNEAL
FIGURE 9. OUTPUT SHORT-CIRCUIT CURRENT, RSET = 511Ω, 2.2VIN
1.8
1.6 LDR BIAS
1.4
SPEC LIMIT
HDR BIAS
CONTROL
1.2
LDR GROUND
1.0
HDR GROUND
0.8
0.6
0.4 0
SPEC LIMIT
50 100
TOTAL DOSE, krad(Si)
150
POST
ANNEAL
FIGURE 10. OUTPUT SHORT-CIRCUIT CURRENT, RSET = 5.11kΩ, 5.5VIN
Submit Document Feedback 11
FN8294.6
September 23, 2016
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet ISL75051SRH.PDF ] | |
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