ISL71090SEH25 Datasheet PDF - Intersil
| Part Number | ISL71090SEH25 | |
| Description | 2.5V Radiation Hardened Ultra Low Noise / Precision Voltage Reference | |
| Manufacturers | Intersil | |
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DATASHEET
2.5V Radiation Hardened Ultra Low Noise, Precision
Voltage Reference
ISL71090SEH25
The ISL71090SEH25 is an ultra low noise, high DC accuracy
precision voltage reference with a wide input voltage range
from 4V to 30V. The ISL71090SEH25 uses the Intersil
Advanced Bipolar technology to achieve 2µVP-P noise at 0.1Hz
with an accuracy over temperature of 0.15%.
The ISL71090SEH25 offers a 2.5V output voltage with
10ppm/°C temperature coefficient and also provides
excellent line and load regulation. The device is offered in an
8 Ld flatpack package.
The ISL71090SEH25 is ideal for high-end instrumentation,
data acquisition and applications requiring high DC precision
where low noise performance is critical.
Applications
• RH voltage regulators precision outputs
• Precision voltage sources for data acquisition system for
space applications
• Strain and pressure gauge for space applications
Related Literature
• AN1847, “ISL71090SEH12EV1Z, ISL71090SEH25EV1Z,
ISL71090SEH50EV1Z, ISL71090SEH75EV1Z User Guide”
• AN1848, “Single Event Effects (SEE) Testing of the
ISL71090SEH Precision Voltage Reference”
• AN1849, “Total Dose Testing of the ISL71090SEH Precision
Voltage Reference”
Features
• Reference output voltage . . . . . . . . . . . . . . . . . . 2.5V ±0.05%
• Accuracy over temperature . . . . . . . . . . . . . . . . . . . . . .±0.15%
• Output voltage noise . . . . . . . 2µVP-P typical (0.1Hz to 10Hz)
• Voltage accuracy over radiation . . . . . . . . . . . . . . . . .±0.175%
• Supply current . . . . . . . . . . . . . . . . . . . . . . . . . 930µA (typical)
• Tempco (box method) . . . . . . . . . . . . . . . . . . . 10ppm/°C Max
• Output current capability . . . . . . . . . . . . . . . . . . . . . . . . 20mA
• Line regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8ppm/V
• Load regulation . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5ppm/mA
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation environment
- High dose rate (50-300rad(Si)/s) . . . . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 100krad(Si)*
- SET/SEL/SEB . . . . . . . . . . . . . . . . . . . . . . 86MeV•cm2/mg
*Product capability established by initial characterization. The
“EH” version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate
• Electrically screened to SMD 5962-13211
VIN
0.1µF
ISL71090SEH25
18
27
3
1nF 4
6
5
VREF
1µF
C
REFIN DACOUT
VDD
VDD
D12
VEE
NOTE: Select C to minimize
settling time.
VEE
BIPOFF
D0
GND
HS-565BRH
1.1k
FIGURE 1. ISL71090SEH25 TYPICAL APPLICATION DIAGRAM
2.503
2.502
2.501
2.500
2.499
2.498
2.497
-55
UNIT3
2.5V +0.1%
UNIT4
UNIT5
UNIT2
-5 45
TEMPERATURE (°C)
UNIT1
2.5V -0.1%
95 145
FIGURE 2. VOUT vs TEMPERATURE
March 18, 2016
FN8451.4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2013, 2014, 2016. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
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ISL71090SEH25
Absolute Maximum Ratings
Max Voltage
VIN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +40V
VIN to GND at an LET = 86MeV•cm2/mg . . . . . . . . . . . . . . . . -0.5V to +36V
VOUT to GND (10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VOUT + 0.5V
Voltage on any Pin to Ground . . . . . . . . . . . . . . . . . . . -0.5V to +VOUT + 0.5V
Voltage on DNC Pins. . . . . . . . . . . . . . . No connections permitted to these pins
Input Voltage Slew Rate (Max) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1V/µs
ESD Ratings
Human Body Model (Tested per MIL-PRF-883 3015.7). . . . . . . . . . . 2kV
Machine Model (Tested per JESD22-A115-A) . . . . . . . . . . . . . . . . . . 200V
Charged Device Model (Tested per JESD22-C101D)). . . . . . . . . . . 750V
Thermal Information
Thermal Resistance (Typical)
JA (°C/W) JC (°C/W)
8 Ld Flatpack Package (Notes 3, 4). . . . . .
140
15
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Maximum Junction Temperature (TJMAX). . . . . . . . . . . . . . . . . . . . . .+150°C
Recommended Operating Conditions
VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V to +30V
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
3. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
4. For JC, the “case temp” location is the center of the ceramic on the package underside.
5. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer-by-wafer basis to 50krad(Si) at low dose rate.
6. The output capacitance used for SEE testing is 0.1µF for CIN and COUT.
Electrical Specifications for Flatpack VIN = 5V, IOUT = 0mA, COUT = 0.1µF, COMP = 1nF unless otherwise specified. Boldface
limits apply after radiation at +25°C and across the operating temperature range, -55°C to +125°C without radiation, unless otherwise specified.
PARAMETER
DESCRIPTION
TEST CONDITIONS
MIN MAX
(Note 7)
TYP
(Note 7)
UNIT
VOUT
VOA
Output Voltage
VOUT Accuracy at TA = +25°C
VOUT = 2.5V, (Note 10)
VOUT Accuracy at TA = -55°C to +125°C VOUT = 2.5V, (Note 10)
VOUT Accuracy at TA = +25°C, Post
Radiation
VOUT = 2.5V, (Note 10)
-0.05
-0.15
-0.175
2.5
+0.05
+0.15
+0.175
V
%
%
%
TC VOUT
Output Voltage Temperature
Coefficient (Note 8)
10 ppm/°C
VIN
IIN
VOUT /VIN
VOUT/IOUT
Input Voltage Range
Supply Current
Line Regulation
Load Regulation
VD Dropout Voltage (Note 9)
ISC+ Short-Circuit Current
ISC- Short-Circuit Current
tR Turn-On Settling Time
Ripple Rejection
VIN = 4V to 30V
Sourcing: 0mA ≤ IOUT ≤ 20mA
Sinking: -10mA ≤ IOUT ≤ 0mA
IOUT = 10mA
TA = +25°C, VOUT tied to GND
TA = +25°C, VOUT tied to VIN
90% of final value, CL = 1.0µF,
CC = open
f = 120Hz
4 30 V
0.930
1.280
mA
8 18 ppm/V
20 35 ppm/mA
40 70 ppm/mA
1.1 1.7
V
55 mA
-61 mA
150 µs
90 dB
eN Output Voltage Noise
VN Broadband Voltage Noise
Noise Density
0.1Hz ≤ f ≤ 10Hz
10Hz ≤ f ≤ 1kHz
f = 1kHz
1.9 µVP-P
1.6 µVRMS
50 nV/√Hz
VOUT/t
Long Term Drift
TA = +125°C, 1000Hrs
15 ppm
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5
FN8451.4
March 18, 2016
Preview 5 Page |
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